The RF1200 is a single-pole double-throw (SPDT) high power switch specially designed to handle GSM power applications. The RF1200 features low insertion loss, low control voltage, high linearity, and very good harmonic characteristics. It is fabricated with 0.5 μm GaAs pHEMT process, and is packaged.
Low Insertion Loss 0.3dB at 1GHz High Isolation 26dB at 1GHz Low Control Voltage 2.6V to 5.0V Harmonics H2: -80dBc@1GHz GaAs pHEMT Process Cellular Handset Applications Antenna Tuning Applications Multi-Mode GSM, W-CDMA Applications IEEE802.11b/g WLAN Applications GSM/GPRS/EDGE Switch Applications Cellular Infrastructure Applications RF1 1 GND 2 RF2 3 6 VRF1 5 RFC 4 VRF2 Applications Functional Block Diagram Product Description The RF1200 is a single-pole double-throw (SPDT) high power switch specially designed to handle GSM power applications. The RF1200 features low .
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