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SIGC04T60

Infineon Technologies

IGBT

www.DataSheet4U.com SIGC04T60 IGBT Chip FEATURES: • 600V Trench & Field Stop technology • low VCE(sat) • low turn-off l...



SIGC04T60

Infineon Technologies


Octopart Stock #: O-601707

Findchips Stock #: 601707-F

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www.DataSheet4U.com SIGC04T60 IGBT Chip FEATURES: 600V Trench & Field Stop technology low VCE(sat) low turn-off losses short tail current positive temperature coefficient easy paralleling 3 This chip is used for: power module discrete components Applications: drives white goods resonant applications C G E Chip Type SIGC04T60 VCE 600V ICn 6A Die Size 1.98 x 1.96 mm2 Package sawn on foil Ordering Code Q67050A4330-A101 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject ink dot size Recommended storage environment 1.98 x 1.96 1.254 x 1.273 0.266 x 0.266 3.9 / 2.14 70 150 0 3779 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C mm µm mm deg 2 mm 2 Edited by INFINEON Technologies AI PS DD CLS, L7491A, Edition 2, 27.01.2005 SIGC04T60 MAXIMUM RATINGS: Parameter Collector-emitter voltage, Tj= 25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature SC data, VGE = 15V, VCC = 360V 1) Symbol VC E IC Icpuls V GE Tj, Ts t g Tvj = 150°C Tvj = 25°C tp Value 600...




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