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C4762

Part Number C4762
Manufacturer JMnic
Title 2SC4762
Description With TO-3P(H)IS package High speed High voltage Low saturation voltage Bult-in damper type APPLICATIONS Horizontal deflection output for medium r...
Features CEsat Collector-emitter saturation voltage VBEsat Base-emitter saturation voltage ICBO Collector cut-off current IEBO Emitter cut-off current hFE-1 DC current gain hFE-2 DC current gain Cob Collector output capacitance VF Forward voltage(damper diode) fT Transition frequency Switching tim...

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C4763 : With TO-3P(H)IS package High speed High voltage Low saturation voltage Bult-in damper type APPLICATIONS Horizontal deflection output for medium resolution display PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter www.jmnic.com 2SC4763 Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current ICM Collector current-Peak IB Base current PC Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 VALUE 1500 600 5 8 16 4 50 150 -55~150 UNIT V V V A A A W .

C4767 : Productnnua 2.3±0.2 Transistor 2SC4767 Silicon NPN epitaxial planer type For high-frequency power amplification s Features q High transition frequency fT. q Output of 0.6W is obtained in the VHF band (f=175MHz). s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 36 16 3 0.5 0.3 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 13.5±0.5lifecycleen 0.7±0.2dce/ 8.0±0.2 stage. 5.0±0.2 Unit: mm 4.0±0.2 0.7±0.1 1.27 +0.15 0.45 –0.1 +0.15 0.45 –0.1 1.27 123 2.54±0.

C4769 : Ordering number:EN3665 NPN Triple Diffused Planar Silicon Transistor 2SC4769 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. · On-chip damper diode. Package Dimensions unit:mm 2039D [2SC4769] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 w w w . D a t a S h e e t 4 U . c o m 4.0 2.8 2.0 20.4 1.0 2.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipati.




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