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FDD4141 Datasheet PDF


Part Number FDD4141
Manufacturer Fairchild Semiconductor
Title P-Channel PowerTrench MOSFET
Description This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized B...
Features „ Max rDS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A „ Max rDS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A „ High performance trench technology for extremely low rDS(on) „ RoHS Compliant tm General Description This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrenc...

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FDD4141 : This P−Channel MOSFET has been produced using onsemi’s proprietary POWERTRENCH technology to deliver low RDS(on) and optimized BVDSS capability to offer superior performance benefit in the applications and optimized switching performance capability reducing power dissipation losses in converter/inverter applications. Features  Max RDS(on) = 12.3 mW at VGS = −10 V, ID = −12.7 A  Max RDS(on) = 18.0 mW at VGS = −4.5 V, ID = −10.4 A  High Performance Trench Technology for Extremely Low RDS(on)  This Device is Pb−Free and is RoHS Compliant Applications  Inverter  Power Supplies MOSFET MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source .

FDD4141-F085 : This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. and optimized switching performance capability reducing power dissipation losses in converter/inverter applications. Applications „ Inverter „ Power Supplies S D G S G D -P A52 K TO -2 (T O -252) D MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Pow.

FDD4243 : This P−Channel MOSFET has been produced using onsemi’s proprietary POWERTRENCH technology to deliver low RDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. Features • Max RDS(on) = 44 mW at VGS = −10 V, ID = −6.7 A • Max RDS(on) = 64 mW at VGS = −4.5 V, ID = −5.5 A • High Performance Trench Technology for Extremely Low rDS(on) • Pb−Free, Halide Free and RoHS Compliant ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise noted. Symbol Parameter Ratings Unit VDS Drain to Source Voltage −40 V VGS Gate to Source Voltage ±20 V ID Drain Current A − Continuous (Package Limited) TC = 25°C −14 − Continuous (Silicon Limited) TC = 25°C −24 .

FDD4243 : „ Max rDS(on) = 44mΩ at VGS = -10V, ID = -6.7A „ Max rDS(on) = 64mΩ at VGS = -4.5V, ID = -5.5A „ High performance trench technology for extremely low rDS(on) „ RoHS Compliant November 2006 This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. Application „ Inverter „ Power Supplies S G S D www.DataSheet4U.com G D -PA K TO -2 52 (TO -252) D MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package.

FDD4243-G : This P−Channel MOSFET has been produced using onsemi’s proprietary POWERTRENCH technology to deliver low RDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. Features • Max RDS(on) = 44 mW at VGS = −10 V, ID = −6.7 A • Max RDS(on) = 64 mW at VGS = −4.5 V, ID = −5.5 A • High Performance Trench Technology for Extremely Low rDS(on) • Pb−Free, Halide Free and RoHS Compliant ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise noted. Symbol Parameter Ratings Unit VDS Drain to Source Voltage −40 V VGS Gate to Source Voltage ±20 V ID Drain Current A − Continuous (Package Limited) TC = 25°C −14 − Continuous (Silicon Limited) TC = 25°C −24 .

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FDD45AN06LA0 : www.DataSheet4U.com FDD45AN06LA0 February 2004 FDD45AN06LA0 N-Channel PowerTrench® MOSFET 60V, 22A, 45mΩ Features • r DS(ON) = 39mΩ (Typ.), VGS = 5V, ID = 22A • Qg(tot) = 8.3nC (Typ.), VGS = 5V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 83535 Applications • Motor / Body Load Control • ABS Systems • Powertrain Management • Injection Systems • DC-DC converters and Off-line UPS • Distributed Power Architectures and VRMs • Primary Switch for 12V and 24V systems DRAIN (FLANGE) D GATE SOURCE G TO-252AA FDD SERIES S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS.

FDD4685 : „ Max rDS(on) = 27mΩ at VGS = –10V, ID = –8.4A „ Max rDS(on) = 35mΩ at VGS = –4.5V, ID = –7A „ High performance trench technology for extremely low rDS(on) „ RoHS Compliant This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and good switching characteristic offering superior performance in application. Application „ Inverter „ Power Supplies G S D DT O- P-2A5K2 (T O -25 2) S G D MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous(Package Limited) -Continuous(Silicon Limited) -Continuo.

FDD4685-F085 : FDD4685-F085 P-Channel PowerTrench® MOSFET FDD4685-F085 P-Channel PowerTrench® MOSFET -40 V, -32 A, 35 mΩ Features  Typical RDS(on) = 23 m at VGS = -10V, ID = -8.4 A  Typical RDS(on) = 30 m at VGS = -4.5V, ID = -7 A  Typical Qg(tot) = 19 nC at VGS = -5V, ID = -8.4 A  UIS Capability  RoHS Compliant  Qualified to AEC Q101 Applications  Inverter  Power Supplies D G S DTO-P-2A5K2 (TO-252) MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol Parameter VDSS VGS ID Drain-to-Source Voltage Gate-to-Source Voltage Drain Current - Continuous (TC 90°C, VGS=10) Pulsed Drain Current EAS Single Pulse Avalanche Energy PD Power Dissipation Derate Above 25oC TJ, TSTG RJC R.

FDD4685_F085 : FDD4685_F085 P-Channel PowerTrench® MOSFET FDD4685_F085 P-Channel PowerTrench® MOSFET -40V, -32A, 35mΩ Features „ Typ rDS(on) = 23mΩ at VGS = -10V, ID = -8.4A „ Typ rDS(on) = 30mΩ at VGS = -4.5V, ID = -7A „ Typ Qg(TOT) = 19nC at VGS = -5V „ High performance trench technology for extremely low rDS(on) „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Inverter „ Power Supplies December 2010 ©2010 Fairchild Semiconductor Corporation FDD4685_F085 Rev. C 1 www.fairchildsemi.com FDD4685_F085 P-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC.

FDD4N60NZ : UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFETTM II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D G S D D-PAK G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID I.




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