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P3057LD


Part Number P3057LD
Manufacturer Niko
Title N-Channel Logic Level Enhancement Mode Field Effect Transistor
Description NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P3057LD TO-252 (DPAK) D PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 50mΩ ID 12A...
Features ) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 20V, VGS = 0V VDS = 20V, V...

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P3057LCG : NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P3057LCG SOT-89 Lead-Free D PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 50mΩ ID 6A 3 G S SYMBOL VGS TC = 25 °C TC = 100 °C TC = 25 °C TC = 100 °C ID IDM PD Tj, Tstg TL LIMITS ±20 6 4 20 3 1.2 -55 to 150 275 1 1. GATE 2. DRAIN 3. SOURCE www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation 1 2 UNITS V A W Operating Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 2.

P3057LS : NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P3057LS TO-263 D PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 50mΩ ID 12A 1. GATE 2. DRAIN 3. SOURCE G S www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Energy Repetitive Avalanche Energy Power Dissipation 2 1 SYMBOL VGS LIMITS ±20 12 8 45 60 3 48 20 -55 to 150 275 UNITS V TC = 25 °C TC = 100 °C L = 0.1mH L = 0.05mH TC = 25 °C TC = 100 °C ID IDM EAS EAR PD Tj, Tstg TL A mJ W Operating Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.) THERMAL RESIST.




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