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2N3056

Part Number 2N3056
Manufacturer Seme LAB
Title (2N3055 / 2N3056) Bipolar NPN Device
Description 2N3055/6 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipol...
Features s and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)145...

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2N3053 : 2N3053 MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) MEDIUM POWER SILICON NPN PLANAR TRANSISTOR 4.19 (0.165) 4.95 (0.195) FEATURES 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. • VCEO = 40V 5.08 (0.200) typ. • IC • Ptot 2.54 (0.100) = 0.7A = 5W 2 1 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 45˚ TO39 PACKAGE Underside View Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VCER VCEX VEBO IC PTOT Tj Tstg Rth(jc) Rth(ja) Semelab plc. Collector – Base Voltage Collector – Emitter Voltage Collector – Emitter Sustaining Voltage Collector - .

2N3053 : .

2N3053 : .

2N3053 : ·Maximun SOA Curve ·High gain-bandwidth Product : fT = 100MHz ·Low Leakage Current APPLICATIONS ·Designed for audio amplifiers ,controlled amplifiers ,ower supplies, power oscillators and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO VCER Collector-Emitter Voltage Collector – Emitter Sustaining Voltage 40 50 V V VCEX Collector - Emiiter Voltage 60 V VEBO IC Emitter-Base Voltage Collector Current-Continuous 5V 0.7 A Collector Power Dissipation@TA=25℃ 1 PC Collector Power Dissipation@TC=25℃ 5 TJ Junction Temperature 200 W W ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS.

2N3053 : VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ VCB (µA) (V) *ICEO **ICES ***ICEV ****ICER MIN 5.0 5.0 5.0 5.0 5.0 5.0 4.0 5.0 5.0 5.0 5.0 5.0 5.0 7.0 7.0 5.0 4.0 7.0 7.0 7.0 7.0 5.0 4.0 4.0 5.0 4.0 4.0 4.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 6.0 6.0 6.0 7.0 7.0 0.10 0.10 0.50 0.50 0.10 0.10 -0.10 0.025 0.025 --0.20 0.10 0.10 0.25 0.01** 0.01** 0.01* 0.01* 0.01* 10 50 0.01* -0.50 0.50 0.50 0.50 0.50 0.50 0.50 0.01** 0.01** 0.10 -0.50*** 0.50*** 20 20 40 40 60 60 50 50 -50 50 50 --30 90 90 30 30 60 60 60 60 100 60 30 -30 30 20 30 30 40 60 50 50 50 -80 120 360 250 MIN 100 40 30 50 40 100 30 20 40 100 100 100 30 100 40 50 30 100 40 100 40 30 50 30 25 40 100 20 50 30 30 25 40 100 40 60 40 40 40 40 MAX 300 120 9.

2N3053 : SYMBOL Collector Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous IC Power Dissipation at Tc=25ºC PD Derate Above 25ºC Operating and Storage Junction Temperature Range Tj, Tstg Lead Temperature 1/16", + 1/32" from Case for 10s TL 2N3053 40 60 5.0 0.7 5.0 28.6 - 65 to +200 +235 2N3053A 60 80 THERMAL RESISTANCE Junction to Case Rth (j-c) 35 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage VCEO IC=1mA, IB=0 Collector Emitter Voltage VCER IC=1mA, RBE=10Ω Collector Base Voltage Emitter Base Voltage VCBO VEBO IC=100µA, IE=0 IE=100µA,.

2N3053 : 2N3053,A CASE 79-02, STYLE 1 TO-39 (TO-205AD) GENERAL PURPOSE TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage(l) Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Lead Temperature 1/16", ±1/32" From Case for 10 s Symbol vCEO VCBO VEBO "C PD TJ' Tstg 2N3053 2N3053A 40 60 60 80 5.0 700 5.0 28.6 -65 to +200 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C T L + 235 °C Refer to 2N3019 for graphs. THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction to Case R&jc mA(1) Applicable to 100 (Pulsed): Pulse Width =s 300 ^tsec, Dut.

2N3053A : .

2N3053A : SYMBOL Collector Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous IC Power Dissipation at Tc=25ºC PD Derate Above 25ºC Operating and Storage Junction Temperature Range Tj, Tstg Lead Temperature 1/16", + 1/32" from Case for 10s TL 2N3053 40 60 5.0 0.7 5.0 28.6 - 65 to +200 +235 2N3053A 60 80 THERMAL RESISTANCE Junction to Case Rth (j-c) 35 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage VCEO IC=1mA, IB=0 Collector Emitter Voltage VCER IC=1mA, RBE=10Ω Collector Base Voltage Emitter Base Voltage VCBO VEBO IC=100µA, IE=0 IE=100µA,.

2N3053A : 2N3053,A CASE 79-02, STYLE 1 TO-39 (TO-205AD) GENERAL PURPOSE TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage(l) Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Lead Temperature 1/16", ±1/32" From Case for 10 s Symbol vCEO VCBO VEBO "C PD TJ' Tstg 2N3053 2N3053A 40 60 60 80 5.0 700 5.0 28.6 -65 to +200 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C T L + 235 °C Refer to 2N3019 for graphs. THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction to Case R&jc mA(1) Applicable to 100 (Pulsed): Pulse Width =s 300 ^tsec, Dut.

2N3054 : 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .

2N3054 : 2N3054 Dimensions in mm (inches). 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. 11.94 (0.470) 12.70 (0.500) 24.13 (0.95) 24.63 (0.97) 1 14.48 (0.570) 14.99 (0.590) 2 0.71 (0.028) 0.86 (0.034) Bipolar NPN Device. VCEO = 55V IC = 4A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) TO66 (TO213AA) PINOUTS 1 – Base 2 – Emitter Case – Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions Min. Typ. Max. 55 4.

2N3054 : ¡¤With TO-66 package APPLICATIONS ¡¤Designed for general purpose switching and amplifier applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-66) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25¡æ ) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current 2N3054 Power dissipation 2N3054A Junction temperature Storage temperature TC=25¡æ 75 200 -65~200 ¡æ ¡æ Open emitter www.DataSheet.net/ CONDITIONS VALUE 90 55 7 4 2 25 UNIT V V V A A W Open base Open collector THERMAL CHARACTERISTICS SYMBOL PARAMETER 2N3054 Rth j-C Thermal resistance junction to ca.

2N3054 : NPN 2N3054 SILICON POWER TRANSISTORS The 2N3054 are NPN transistors mounted in TO-66 metal package with the collector connected to the case . They Designed for general purpose switching and amplifier applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC ICM IB PD TJ TStg Ratings Collector-Emitter Voltage (IB = 0) Collector-Base Voltage (IE = 0) Emitter-Base Voltage (IC = 0) Collector Current Peak Collector Current Base Current Total Power Dissipation Junction Temperature Storage Temperature range www.DataSheet.net/ Value 55 90 7 4 10 2 25 200 -65 to +200 Unit V V V A A W °C °C @ Tcase= 25° THERMAL CHARACTERISTICS Symbol RthJ-c Ratings Thermal Resistance, .

2N3054 : The 2N3054 is a silicon NPN transistor in a TO66 type package designed for general purpose switching and amplifier applications Features: D Excellent Safe Operating Area D DC Current Gain Specified to 3.0 Amps Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55V Collector−Emitter Voltage (RBE = 1005 ), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V Emitter−Base Voltage, VEB . . . . . . ..

2N3054A : 2N3054A MECHANICAL DATA Dimensions in mm NPN POWER TRANSISTOR IN A HERMETIC PACKAGE 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. 24.33 (0.958) 24.43 (0.962) 0.71 (0.028) 0.86 (0.034) FEATURES 11.94 (0.470) 12.70 (0.500) 14.48 (0.570) 14.99 (0.590) • GENERAL PURPOSE SWITCHING AND AMPLIFIER APPLICATIONS. • MAINTENANCE STATUS DO NOT USE ON NEW DESIGNS 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) TO66 Pin 1 – Base Pin 2 – Emitter Case - Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VCER VEB IC IC(PK) IB PD TJ,Tstg Collector – Base Voltage Collector – Emitter Voltage Collector – Emitter .

2N3054A : 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .




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