DatasheetsPDF.com

BD243C Datasheet PDF


Part Number BD243C
Manufacturer Bourns Electronic Solutions
Title NPN SILICON POWER TRANSISTORS
Description BD243, BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS ● ● ● ● ● Designed for Complementary Use with the BD244 Series 65 W at 25°C Case Tem...
Features m from case for 10 seconds NOTES: 1. 2. 3. 4. VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL V CEO VCER SYMBOL VALUE 55 70 90 115 45 60 80 100 5 6 10 3 65 2 62.5 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C ca...

File Size 138.84KB
Datasheet BD243C PDF File








Similar Ai Datasheet

BD243 : BD243/A/B/C BD243/A/B/C Medium Power Linear and Switching Applications • Complement to BD244, BD244A, BD244B and BD244C respectively 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BD243 : BD243A : BD243B : BD243C VCEO Collector-Emitter Voltage : BD243 : BD243A : BD243B : BD243C Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 45 60 80 100 45 60 80 100 5 6 10 2 65 150 - 65 ~ 150 V V V V V V V V V A A A W °C °C Value Units VEBO IC ICP IB PC TJ TSTG Electri.

BD243 : Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD243, BD243A, BD243B, BD243C BD244, BD244A, BD244B, BD244C BD243, 243A, 243B, 243C NPN PLASTIC POWER TRANSISTORS BD244, 244A, 244B, 244C PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications N LH BF C E 12 3 A OO K D G J M All diminsions in mm. PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 DIM MIN . MAX. A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D 0.90 E 1.15 1.40 F 3.75 3.88 G 2.29 2.79 H 2.54 3.43 J 0.56 K 12.70 14.73 L 2.80 4.07 M 2.03 2.92 N 31.24 O DEG 7 4 ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open e.

BD243 : BD243, BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS ● ● ● ● ● Designed for Complementary Use with the BD244 Series 65 W at 25°C Case Temperature 6 A Continuous Collector Current 10 A Peak Collector Current Customer-Specified Selections Available B C E TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. www.DataSheet4U.com MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BD243 Collector-emitter voltage (RBE = 100 Ω) BD243A BD243B BD243C BD243 Collector-emitter voltage (IC = 30 mA) BD243A BD243B BD243C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base .

BD243 : ·DC Current Gain -hFE =30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BD243; 60V(Min)- BD243A 80V(Min)- BD243B; 100V(Min)- BD243C ·Complement to Type BD244/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD243 55 BD243A 70 VCBO Collector-Base Voltage V BD243B 90 BD243C 110 BD243 45 VCEO Collector-Emitter Voltage BD243A 60 V BD243B 80 BD243C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current.

BD243A : BD243/A/B/C BD243/A/B/C Medium Power Linear and Switching Applications • Complement to BD244, BD244A, BD244B and BD244C respectively 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BD243 : BD243A : BD243B : BD243C VCEO Collector-Emitter Voltage : BD243 : BD243A : BD243B : BD243C Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 45 60 80 100 45 60 80 100 5 6 10 2 65 150 - 65 ~ 150 V V V V V V V V V A A A W °C °C Value Units VEBO IC ICP IB PC TJ TSTG Electri.

BD243A : Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD243, BD243A, BD243B, BD243C BD244, BD244A, BD244B, BD244C BD243, 243A, 243B, 243C NPN PLASTIC POWER TRANSISTORS BD244, 244A, 244B, 244C PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications N LH BF C E 12 3 A OO K D G J M All diminsions in mm. PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 DIM MIN . MAX. A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D 0.90 E 1.15 1.40 F 3.75 3.88 G 2.29 2.79 H 2.54 3.43 J 0.56 K 12.70 14.73 L 2.80 4.07 M 2.03 2.92 N 31.24 O DEG 7 4 ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open e.

BD243A : BD243, BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS ● ● ● ● ● Designed for Complementary Use with the BD244 Series 65 W at 25°C Case Temperature 6 A Continuous Collector Current 10 A Peak Collector Current Customer-Specified Selections Available B C E TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. www.DataSheet4U.com MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BD243 Collector-emitter voltage (RBE = 100 Ω) BD243A BD243B BD243C BD243 Collector-emitter voltage (IC = 30 mA) BD243A BD243B BD243C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base .

BD243A : ·DC Current Gain -hFE =30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BD243; 60V(Min)- BD243A 80V(Min)- BD243B; 100V(Min)- BD243C ·Complement to Type BD244/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD243 55 BD243A 70 VCBO Collector-Base Voltage V BD243B 90 BD243C 110 BD243 45 VCEO Collector-Emitter Voltage BD243A 60 V BD243B 80 BD243C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current.

BD243B : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD243B/D Complementary Silicon Plastic Power Transistors designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc • Collector Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min) — BD243B, BD244B VCEO(sus) = 100 Vdc (Min) — BD243C, BD244C • High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc • Compact TO–220 AB Package MAXIMUM RATINGS BD243B BD243C* PNP BD244B BD244C* *Motorola Preferred Device NPN ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î.

BD243B : BD243B, BD243C (NPN), BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features • High Current Gain Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage BD243B, BD244B BD243C, BD244C VCEO 80 100 Vdc Collector−Base Voltage BD243B, BD244B BD243C, BD244C VCB Vdc 80 100 Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C VEB 5.0 Vdc IC 6 Adc ICM 10 Adc IB 2.0 Adc PD 65 W 0.52 W/°C Operating and St.

BD243B : The BD243B and BD243C are silicon Epitaxial-Base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP types are BD244B and BD244C respectively. TO-220 1 2 3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO V EBO IC I CM IB P t ot T stg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Total Dissipation at Tc ≤ 25 C Storage T emperature Max. O perating Junction Temperature o Value BD243B BD244B 80 80 5 6 10 2 65 -65 to 150 150 BD243C BD244C 100 .

BD243B : BD243/A/B/C BD243/A/B/C Medium Power Linear and Switching Applications • Complement to BD244, BD244A, BD244B and BD244C respectively 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BD243 : BD243A : BD243B : BD243C VCEO Collector-Emitter Voltage : BD243 : BD243A : BD243B : BD243C Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 45 60 80 100 45 60 80 100 5 6 10 2 65 150 - 65 ~ 150 V V V V V V V V V A A A W °C °C Value Units VEBO IC ICP IB PC TJ TSTG Electri.

BD243B : Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD243, BD243A, BD243B, BD243C BD244, BD244A, BD244B, BD244C BD243, 243A, 243B, 243C NPN PLASTIC POWER TRANSISTORS BD244, 244A, 244B, 244C PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications N LH BF C E 12 3 A OO K D G J M All diminsions in mm. PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 DIM MIN . MAX. A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D 0.90 E 1.15 1.40 F 3.75 3.88 G 2.29 2.79 H 2.54 3.43 J 0.56 K 12.70 14.73 L 2.80 4.07 M 2.03 2.92 N 31.24 O DEG 7 4 ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open e.

BD243B : BD243, BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS ● ● ● ● ● Designed for Complementary Use with the BD244 Series 65 W at 25°C Case Temperature 6 A Continuous Collector Current 10 A Peak Collector Current Customer-Specified Selections Available B C E TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. www.DataSheet4U.com MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BD243 Collector-emitter voltage (RBE = 100 Ω) BD243A BD243B BD243C BD243 Collector-emitter voltage (IC = 30 mA) BD243A BD243B BD243C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base .

BD243B : ·DC Current Gain -hFE =30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BD243; 60V(Min)- BD243A 80V(Min)- BD243B; 100V(Min)- BD243C ·Complement to Type BD244/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD243 55 BD243A 70 VCBO Collector-Base Voltage V BD243B 90 BD243C 110 BD243 45 VCEO Collector-Emitter Voltage BD243A 60 V BD243B 80 BD243C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current.

BD243C : The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type is BD244C. . 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order code BD243C BD244C Marking BD243C BD244C Package TO-220 Packaging Tube July 2007 Rev 5 1/10 www.st.com 10 Absolute maximum ratings 1 Absolute maximum ratings BD243C BD244C Note: Table 2. Symbol Absolute maximum ratings Parameter VCBO VCEO VEBO IC ICM IB PTOT Tstg TJ Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitte-base voltage (IC = 0) Collector current Collector peak .

BD243C : BD243/A/B/C BD243/A/B/C Medium Power Linear and Switching Applications • Complement to BD244, BD244A, BD244B and BD244C respectively 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BD243 : BD243A : BD243B : BD243C VCEO Collector-Emitter Voltage : BD243 : BD243A : BD243B : BD243C Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 45 60 80 100 45 60 80 100 5 6 10 2 65 150 - 65 ~ 150 V V V V V V V V V A A A W °C °C Value Units VEBO IC ICP IB PC TJ TSTG Electri.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)