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Power Transistors 2SC5440 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm ■ Features 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage, and high reliability through the use of a glass passivation lay.
15.5±0.5 φ 3.2±0.1 5˚
3.0±0.3 5˚
(4.5)
26.5±0.5 (2.0)
(1.2) (10.0)
(23.4) 22.0±0.5
• High breakdown voltage, and high reliability through the use of a
glass passivation layer
• High-speed switching
• Wide safe operation area (ASO)
5˚
(4.0)
5˚
2.0±0.2
5˚
1.1±0.1
0.7±0.1
/
■ Absolute Maximum Ratings TC = 25°C
18.6±0.5 (2.0)
Solder Dip
5.45±0.3
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
1 500
V
c e. d ty Collector-emitter voltage (E-B short) VCES
1 500
3.3±0.3
5.5±0.3
V
n d stag tinue Collector-emitter voltage (Base open) VCEO
600
.
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