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2SC1959


Part Number 2SC1959
Manufacturer Micro Commercial Components
Title Transistor
Description MCC Features •   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1959 Audi...
Features
•   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1959 Audio frequency low power amplifier applications, driver stage amplifier applications, switching applications www.DataSheet4U.com
• Excellent hFE Linearity: hFE(2) =25(Min...

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2SC1953 : Power Transistors 2SC1953 Silicon NPN epitaxial planar type For audio system/pre-drive Complementary to 2SA0914 φ 3.16±0.1 8.0+–00..15 Unit: mm 3.2±0.2 3.8±0.3 11.0±0.5 ■ Features 3.05±0.1 • High collector-emitter voltage (Base open) VCEO • Small collector output capacitance (Common base, input open cir- 1.9±0.1 16.0±1.0 cuited) Cob • A complementary pair with 2SA0914, is optimum for the pre-driver stage of a 60 W to 100 W output amplifier / • TO-126B package which requires no insulation plate for installa- tion to the heat sink ce type) ■ Absolute Maximum Ratings Ta = 25°C n d tage. ued Parameter Symbol Rating Unit le s ontin Collector-base voltage (Emitter open) VCBO 15.

2SC1953 : ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·Good Linearity of hFE ·Complement to Type 2SA914 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency power pre-amplification,which is optimum for the pre-driver stage of a 60 W to 100 W output amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 50 mA ICP Collector Current-Peak PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 100 mA 1.2 W 150 ℃ Tstg Storag.

2SC1953 : ·With TO-126 package ·Complement to type 2SA914 ·High VCEO APPLICATIONS ·For low-frequency power pre-amplification PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute Maximun Ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector VALUE 150 150 5 50 100 1.2 150 -55~150 UNIT V V V mA mA W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherw.

2SC1955 : SILICON NPN EPITAXIAL PLANAR TYPE 2SC1955 VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES • . Output Power : Po=2.8W (Min.) ( f=175MHz, VCC =13.5V, Pi=0.15W) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VC C=13.5V, P =4W, f=175MHz MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc=25 °C) Junction Temperature Storage Temperature Range SYMBOL v CB0 VCEO Vebo ic ?C T J T stg RATING 35 17 3.5 0.8 7.5 175 -65 ~175 UNIT V V V A W °C °C Unit in mm J^9.Z9lllAX. 0'a45MAX 1 1 00. A 5 1 0&O8 c5 - s to «5 - M s 03 H ? T" 3\ (\ Xv45 \ 1. EMITTER (CASE) .

2SC1957 : 2SC1957(3DG1957) NPN /SILICON NPN TRANSISTOR :。 Purpose: Large signal output amplifier. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 75 V VCEO 40 V VEBO 4.0 V IC 1.0 A PC(Ta=25℃) 0.75 W PC(Tc=25℃) 5.0 W Tj 150 ℃ Tstg -55~150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO hFE VCE(sat) fT Cob PO ηC VCB=40V VCE=10V IC=500mA VCE=10V VCB=10V IE=0 VCC=12V Pj=35mW IE=0 IC=0.5A IB=50mA IC=150mA f=1.0MHz f=27MHz Min 20 150 1.0 60 Rating Typ 90 0.3 250 14 1.8 Max 1.0 200 0.5 20 Unit μA V MHz pF W % hFE /hFE classifications: S:30~60 R:45~90 Q:80~200 K:20~200 FOSHAN BLUE ROCKET ELECTRONICS CO., LTD. .

2SC1959 : TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SC1959 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications 2SC1959 Unit: mm · Excellent hFE linearity: hFE (2) = 25 (min): VCE = 6 V, IC = 400 mA · 1 watt amplifier applications. · Complementary to 2SA562TM. Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 35 30 5 500 100 500 150 -55~150 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Cha.

2SC1959 : Elektronische Bauelemente 2SC1959 0.5A, 35V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  Excellent hFE Linearity  High Transition Frequency CLASSIFICATION OF hFE Product-Rank 2SC1959-O hFE(1) Range hFE(2) 70~140 25 (Min) 2SC1959-Y 120~240 40 (Min) 2SC1959-GR 200~400 - MARKING C1959 031 Collector   Base  Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Continuous Collector Current IC Collector Power Dissipation PC Thermal Resistance from Junction to Ambient RθJA.

2SC1959-GR : MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1959-O 2SC1959-Y 2SC1959-GR Features • Audio frequency low power amplifier applications, driver stage amplifier applications, switching applications • Excellent hFE Linearity: hFE(2) =25(Min.) : VCE=6.0V, IC=400mA • 1 Watt Amplifier applications • Complementary to 2SA562TM. • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 x Marking: C1959 • Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) • Halogen free available upon request by adding suffix "-HF" Maximum Ratings .

2SC1959-O : MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1959-O 2SC1959-Y 2SC1959-GR Features • Audio frequency low power amplifier applications, driver stage amplifier applications, switching applications • Excellent hFE Linearity: hFE(2) =25(Min.) : VCE=6.0V, IC=400mA • 1 Watt Amplifier applications • Complementary to 2SA562TM. • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 x Marking: C1959 • Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) • Halogen free available upon request by adding suffix "-HF" Maximum Ratings .

2SC1959-Y : MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1959-O 2SC1959-Y 2SC1959-GR Features • Audio frequency low power amplifier applications, driver stage amplifier applications, switching applications • Excellent hFE Linearity: hFE(2) =25(Min.) : VCE=6.0V, IC=400mA • 1 Watt Amplifier applications • Complementary to 2SA562TM. • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 x Marking: C1959 • Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) • Halogen free available upon request by adding suffix "-HF" Maximum Ratings .

2SC1959M : SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package.  / Features hFE , 2SA562M 。 Excellent hFE Linearity, complementary pair with 2SA562M. / Applications ,。 Audio frequency low power amplifier,driver stage amplifier and switching applications. / Equivalent Circuit / Pinning 3 2 1 PIN1:Emitter PIN 2:Base PIN 3:Collector / hFE Classifications & Marking hFE Classifications Symbol hFE Range O 70~140 Y 120~240 Marking HVBO HVBY http://www.fsbrec.com 1/6 2SC1959M Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Emitter Current Collector Power Dissi.




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