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S8550 Datasheet PDF


Part Number S8550
Manufacturer BL
Title Silicon Epitaxial Planar Transistor
Description BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z z z High Collector Current.(IC= -500mA) Complementary To S8050. Excellent HFE ...
Features z z z High Collector Current.(IC= -500mA) Complementary To S8050. Excellent HFE Linearity. Production specification S8550 Pb Lead-free www.DataSheet4U.com APPLICATIONS z High Collector Current. SOT-23 ORDERING INFORMATION Type No. S8550 Marking 2TY Package Code SOT-23 MAXIMUM RATING @ Ta=25℃...

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S8550 : JIEJIE MICROELECTRONICS CO. , Ltd  S8550 Small Signal PNP Transistor Rev.1.0 FEATURE:   Complementary to S8050.  Power dissipation of 300mW.  High stability and high reliability. MECHANICAL DATA:   SOT-23 small outline plastic package  Epoxy UL: 94V-0  Mounting position: Any  Marking:2TY   ABSOLUTE MAXIMUM RATINGS(TA=25℃,unless otherwise specified.) Parameter Storage temperature range Max. operating junction temperature Collector-emitter voltage (IB=0) Collector-base voltage (IE=0) Emitter-base voltage (IC=0) Collector current Collector power dissipation                             Symbol Tstg Tj VCEO VCBO VEBO IC PC Value -55 to150 150 -25 -40 -5 -500 300 Unit ℃ ℃ V V V mA m.

S8550 : S8550 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation PCM : 0.625 W (Tamb=25℃) Collector current A ICM : - 0.5 Collector-base voltage V(BR)CBO : - 40 V 1 2 3 1. EMITTER 2. BASE 3. COLLECTOR ELECTRICAL CHARACTERISTICS(Tamb=25℃ Symbol voltage voltage V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE(1) unless otherwise specified) Test conditions IE=0 IB=0 IC=0 IE=0 IB=0 IC=0 85 50 MIN TYP MAX UNIT V V V Parameter Collector-base breakdown Ic= -100μA , Ic=- 0.1 mA, IE=-100μA, VCB= -40 VCE=-20 VEB= - 3 VCE= -1 V, VCE= -1 V, V, V, V, - 40 - 25 -5 Collector-emitter breakdown Emitter-base breakdown current current current voltage Collector cut-off Collector cut-off Emitter cut-off - 0.1 .

S8550 : www.DataSheet4U.com S8550 PNP General Purpose Transistors P b Lead(Pb)-Free TO-92 1. E MIT T E R 2. B A SE 3. COL L E CTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-E m itter Voltage Collector-B as e Voltage E m itter-B as e VOltage Collector Current Total Device Dis s ipation TA=2 5 C J unction Tem perature S torage, Tem perature Symbol V CE O V CB O VE B O IC PD Tj Ts tg Value -2 5 -4 0 -5 . 0 -5 0 0 0.625 150 -5 5 to +1 5 0 Unit Vdc Vdc Vdc m Adc W C C ELECTRICAL CHARACTERISTICS Characteristics Collector-E m itter B reakdown Voltage (I C = -0 . 1 m Adc, I B =0 ) Collector-B as e B reakdown Voltage (I C = -1 0 0 µAdc, I E =0 ) E m itter-B as e B reakdown Voltage (I .

S8550 : The UTC S8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier and general purpose applications.  FEATURES * Collector current up to 700mA * Collector-Emitter voltage up to 20 V * Complementary to UTC S8050 1 TO-92  ORDERING INFORMATION Order Number Lead Free Plating Halogen Free S8550L-x-T92-B S8550G-x-T92-B S8550L-x-T92-K S8550G-x-T92-K Package TO-92 TO-92 Pin Assignment 123 EBC EBC Packing Tape Box Bulk  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R201-014. E S8550 PNP SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified.) PARAMETER SYMBOL.

S8550 : APD Si APD array S8550 4 × 8 element APD array with low noise and enhanced short-wavelength sensitivity S8550 is an APD (avalanche photodiode) array designed for short wavelength detection, featuring low noise and low terminal capacitance. S8550 also offers uniform gain and small cross-talk between each element. www.DataSheet4U.com Features Applications l High sensitivity and low noise in short wavelength region l Low terminal capacitance l Optimized for blue light detection l Uniform gain and low cross-talk variation between each element l Low-light-level photometry in the visible range l Detector systems combined with scintillator s General ratings Parameter Element size Element pi.

S8550 : Silicon Epitaxial Planar Transistor FEATURES  High Collector Current.(IC= -500mA).  Complementary To S8050.  Excellent HFE Linearity. Pb Lead-free APPLICATIONS  High Collector Current. ORDERING INFORMATION Type No. Marking S8550 2TY Production specification S8550 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -40 VCEO Collector-Emitter Voltage -25 VEBO Emitter-Base Voltage -5 IC Collector Current -Continuous -500 PC Collector Dissipation 300 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ C080 Rev.A www.gmesemi.com 1 Production specification Silicon.

S8550 : Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S8550 TRANSISTOR (PNP) FEATURE Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: -0.5 Collector-base voltage A V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ TO-92 1. EMITTER 2. BASE 3. COLLECTOR 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation vo.

S8550 : TO-92 PNP 。Silicon PNP transistor in a TO-92 Plastic Package.  / Features PC,IC , S8050 。 High PC and IC, complementary pair with S8050.  / Applications 。 Amplifier of portable radios in class B push-pull operation. / Equivalent Circuit / Pinning 123 PIN1:Collector PIN 2:Base PIN 3:Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range B 85~160 C 120~200 D 160~300 http://www.fsbrec.com 1/6 S8550 Rev.E Mar.-2016 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Base Current - Continuous Collector Power Dissipation Junction Te.

S8550 : MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • TO-92 Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.5A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55OC to +150OC • Marking Code: S8550 Pin Configuration C BE Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter OFF CHARACTERISTICS Min Max Units V(BR)CBO Collector-Base Breakdown Voltage (IC=100uAdc, IE=0) V(BR)CEO Collector-Emitter Breakdown Voltage (IC=0.1mAdc, IB=0) V(BR)EBO Emitter-Base Breakdown Voltage (IE=100uAdc, .

S8550 : Elektronische Bauelemente S8550 PNP Silicon Plastic-Encapsulate Transistors FEATURES Complimentary to S8050 Collector Current: IC=0.5A MARKING: 2TY RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 1 Base 3 Collector 2 Emitter A L 3 Top View 12 VG BS C D H K MAXIMUM RATINGS (TA=25OC unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous PC Collector Dissipation Tj Junction Temperature Tstg Storage Temperature SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.0.

S8550 : TRANSISTOR(PNP) FEATURES z Complimentary to S8050 z Collector current: IC=0.5A MARKING : 2TY SOT-23 SS8 95051 02 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -40 -25 -5 -0.5 0.3 150 -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off cu.

S8550LT1 : S8550LT1 HIGH VOLTAGE TRANSISTOR: (PNP) FEATURES Die Size 0.44*0.44mm Power dissipation PCM : 225mW (Tamb=25℃) Collector current ICM : 0.5A Collector-base voltage V(BR)CBO : 40V PNP EPITAXIAL SILICON TRANSISTORS SOT—23 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO HFE(1) Test conditions Ic= 100µA , IE=0 Ic= 1 mA,IB=0 IE= 100µA,IC=0 VCB= 30V , IE=0 VEB= 5V,IC=0 VCE= 1V, IC= 150mA VCE= 1V, IC= 500mA IC= 500mA, IB= 50 mA IC= 500mA, IB= 50 mA IC= 10mA, VCE =1V MIN 30 21 5.0 TYP MAX UNIT V V V Collector-emitter breakdown Emitter-base breakdo.

S8550LT1 : Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors S8550LT1 TRANSISTOR (PNP) FEATURES SOT-23 1. BASE 2. EMITTER 3. COLLECTOR 1. 0 Power dissipation PCM: 0.3 W (Tamb=25℃) Collector current ICM: -0.5 Collector-base voltage A V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 2. 9 1. 9 0. 95 0. 95 2. 4 1. 3 Unit: mm 0. 4 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitte.

S8550M : SOT-23 PNP 。Silicon PNP transistor in a SOT-23 Plastic Package.  / Features S8050M 。 Complementary pair with S8050M.  / Applications 。 Power amplifier applications. / Equivalent Circuit / Pinning 3 2 1 PIN1:Emitter PIN 2:Base PIN 3:Collector / hFE Classifications & Marking hFE Classifications Symbol hFE Range B 85~160 C 120~200 Marking HY4B HY4C D 160~300 HY4D http://www.fsbrec.com 1/6 S8550M Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO .

S8550MG : S8550MG TECHNICAL DATA Infrared Laser Diode Features • Lasing Mode Structure: multi mode • Peak Wavelength : typ. 850 nm • Optical Ouput Power: 50 mW • Package: 5.6 mm Electrical Connection Pin Configuration n-type PIN Function 1 LD Cathode 2 LD Anode, PD Cathode 3 PD Anode Bottom View Absolute Maximum Ratings (TC=25°C) Item CW Output Power LD Reverse Voltage Operating Case Temperature Storage Temperature Symbol PO VrLD TC Tstg Value 50 2 -10 +50 -40 +85 Unit mW V °C °C Specifications (TC=25°C, PO=50mW) Item Symbol Min. Optical Specifications Center Wavelength FWHM Beam Divergence* Electrical Specifications λC 830 θ║ θ┴ - Threshold Current Operating Current Slope Efficienc.

S8550MG : SOT-23 PNP 。Silicon PNP transistor in a SOT-23 Plastic Package.  / Features S8050MG 。。 Complementary pair with S8050MG.HF Product.  / Applications 。 Power amplifier applications. / Equivalent Circuit / Pinning 3 2 1 PIN1:Emitter PIN 2:Base PIN 3:Collector / hFE Classifications & Marking hFE Classifications Symbol hFE Range Marking B 85~160 GY4B C 120~200 GY4C D 160~300 GY4D http://www.fsbrec.com 1/6 S8550MG Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCB.




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