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SST310 Datasheet PDF


Part Number SST310
Manufacturer Calogic
Title (SST308 - SST310) N-Channel JFET High Frequency Amplifier
Description N-Channel JFET High Frequency Amplifier CORPORATION J308 – J310 / SST308 – SST310 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise s...
Features ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Drain-Gate Voltage . . -25V Drain-Source Voltage. -25V Continuous Forward Gate Current . -10mA Sto...

File Size 53.09KB
Datasheet SST310 PDF File








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SST310 : SST310 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix SST310 The SST310 is a high frequency n-channel JFET offering a wide range and low noise performance. The SOT-23 package is well suited for cost sensitive applications and mass production. (See Packaging Information). FEATURES  DIRECT REPLACEMENT FOR SILICONIX SST310  OUTSTANDING HIGH FREQUENCY GAIN   LOW HIGH FREQUENCY NOISE  ABSOLUTE MAXIMUM RATINGS @ 25°C1   Gpg = 11.5dB  NF = 2.7dB  Maximum Temperatures  Storage Temperature  ‐55°C to +150°C  ƒ High Power Low Noise gain Operating Junction Temperature  ‐55°C to +135°C  ƒ Dynamic Range greater than 100dB Maximum Power Dissipation  ƒ Easily matched to 75Ω input Continuous.

SST31LF021 : The SST31LF021/021E devices are a 256K x8 CMOS flash memory bank combined with a 128K x8 or 32K x8 CMOS SRAM memory bank manufactured with SST’s proprietary, high performance SuperFlash technology. Two pinout standards are available for these devices. The SST31LF021 conform to JEDEC standard flash pinouts and the SST31LF021E conforms to standard EPROM pinouts. The SST31LF021/021E devices write (SRAM or flash) with a 3.0-3.6V power supply. The monolithic SST31LF021/021E devices conform to Software Data Protect (SDP) commands for x8 EEPROMs. Featuring high performance Byte-Program, the flash memory bank provides a maximum Byte-Program time of 20 µsec. The entire flash memory bank can be erased.

SST31LF021E : The SST31LF021/021E devices are a 256K x8 CMOS flash memory bank combined with a 128K x8 or 32K x8 CMOS SRAM memory bank manufactured with SST’s proprietary, high performance SuperFlash technology. Two pinout standards are available for these devices. The SST31LF021 conform to JEDEC standard flash pinouts and the SST31LF021E conforms to standard EPROM pinouts. The SST31LF021/021E devices write (SRAM or flash) with a 3.0-3.6V power supply. The monolithic SST31LF021/021E devices conform to Software Data Protect (SDP) commands for x8 EEPROMs. Featuring high performance Byte-Program, the flash memory bank provides a maximum Byte-Program time of 20 µsec. The entire flash memory bank can be erased.

SST31LF041 : The SST31LF041/041A devices are a 512K x8 CMOS flash memory bank combined with a 128K x8 CMOS SRAM memory bank manufactured with SST’s proprietary, high performance SuperFlash technology. The SST31LF041/041A devices write (SRAM or flash) with a 3.0-3.6V power supply. The monolithic SST31LF041/041A devices conform to Software Data Protect (SDP) commands for x8 EEPROMs. Featuring high performance Byte-Program, the flash memory bank provides a maximum Byte-Program time of 20 µsec. The entire flash memory bank can be erased and programmed byte-by-byte in typically 8 seconds, when using interface features such as Toggle Bit or Data# Polling to indicate the completion of Program operation. To prot.

SST31LF041A : The SST31LF041/041A devices are a 512K x8 CMOS flash memory bank combined with a 128K x8 CMOS SRAM memory bank manufactured with SST’s proprietary, high performance SuperFlash technology. The SST31LF041/041A devices write (SRAM or flash) with a 3.0-3.6V power supply. The monolithic SST31LF041/041A devices conform to Software Data Protect (SDP) commands for x8 EEPROMs. Featuring high performance Byte-Program, the flash memory bank provides a maximum Byte-Program time of 20 µsec. The entire flash memory bank can be erased and programmed byte-by-byte in typically 8 seconds, when using interface features such as Toggle Bit or Data# Polling to indicate the completion of Program operation. To prot.

SST31LF043 : The SST31LF041/041A/043/043A devices are a 512K x8 CMOS flash memory bank combined with a 128K x8 or 32K x8 CMOS SRAM memory bank manufactured with SST’s proprietary, high performance SuperFlash technology. The SST31LF041/041A/043/043A devices write (SRAM or flash) with a 3.0-3.6V power supply. The monolithic SST31LF041/041A/043/043A devices conform to Software Data Protect (SDP) commands for x8 EEPROMs. Featuring high performance Byte-Program, the flash memory bank provides a maximum Byte-Program time of 20 µsec. The entire flash memory bank can be erased and programmed byte-by-byte in typically 8 seconds, when using interface features such as Toggle Bit or Data# Polling to indicate the com.

SST31LF043A : The SST31LF041/041A/043/043A devices are a 512K x8 CMOS flash memory bank combined with a 128K x8 or 32K x8 CMOS SRAM memory bank manufactured with SST’s proprietary, high performance SuperFlash technology. The SST31LF041/041A/043/043A devices write (SRAM or flash) with a 3.0-3.6V power supply. The monolithic SST31LF041/041A/043/043A devices conform to Software Data Protect (SDP) commands for x8 EEPROMs. Featuring high performance Byte-Program, the flash memory bank provides a maximum Byte-Program time of 20 µsec. The entire flash memory bank can be erased and programmed byte-by-byte in typically 8 seconds, when using interface features such as Toggle Bit or Data# Polling to indicate the com.




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