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LE28FV4001R Datasheet PDF


Part Number LE28FV4001R
Manufacturer Sanyo Semicon Device
Title 4MEG (52488 x 8 Bits) Flash Memory
Description Ordering number : EN*5468 CMOS LSI LE28FV4001M, T, R-20/25 4MEG (52488 × 8 Bits) Flash Memory Preliminary Overview The LE28FV4001M, T, R Series ...
Features
• Highly reliable 2 layer polysilicon CMOS flash EEPROM process
• Read and write operations using a 3.3 V single-voltage power supply
• High-speed access: 200 and 250 ns
• Low power — Operating (read): 10 mA (maximum) — Standby: 20 µA (maximum)
• Highly reliable read write —Number of sector write cy...

File Size 230.16KB
Datasheet LE28FV4001R PDF File








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LE28FV4001M : Ordering number : EN*5468 CMOS LSI LE28FV4001M, T, R-20/25 4MEG (52488 × 8 Bits) Flash Memory Preliminary Overview The LE28FV4001M, T, R Series are 4 MEG flash memory products that feature a 542488-word × 8-bit organization and 3.3 V single-voltage power supply operation. CMOS peripheral circuits were adopted for high speed, low power, and ease of use. The LE28FV4001M also supports high-speed data rewriting by providing a sector (256 bytes) erase function. Package Dimensions unit: mm 3205-SOP32 [LE28FV4001M. T, R] Features • Highly reliable 2 layer polysilicon CMOS flash EEPROM process • Read and write operations using a 3.3 V single-voltage power supply • High-speed access: 200 and 250 .

LE28FV4001R-20 : Ordering number : EN*5468 CMOS LSI LE28FV4001M, T, R-20/25 4MEG (52488 × 8 Bits) Flash Memory Preliminary Overview The LE28FV4001M, T, R Series are 4 MEG flash memory products that feature a 542488-word × 8-bit organization and 3.3 V single-voltage power supply operation. CMOS peripheral circuits were adopted for high speed, low power, and ease of use. The LE28FV4001M also supports high-speed data rewriting by providing a sector (256 bytes) erase function. Package Dimensions unit: mm 3205-SOP32 [LE28FV4001M. T, R] Features • Highly reliable 2 layer polysilicon CMOS flash EEPROM process • Read and write operations using a 3.3 V single-voltage power supply • High-speed access: 200 and 250 .

LE28FV4001R-25 : Ordering number : EN*5468 CMOS LSI LE28FV4001M, T, R-20/25 4MEG (52488 × 8 Bits) Flash Memory Preliminary Overview The LE28FV4001M, T, R Series are 4 MEG flash memory products that feature a 542488-word × 8-bit organization and 3.3 V single-voltage power supply operation. CMOS peripheral circuits were adopted for high speed, low power, and ease of use. The LE28FV4001M also supports high-speed data rewriting by providing a sector (256 bytes) erase function. Package Dimensions unit: mm 3205-SOP32 [LE28FV4001M. T, R] Features • Highly reliable 2 layer polysilicon CMOS flash EEPROM process • Read and write operations using a 3.3 V single-voltage power supply • High-speed access: 200 and 250 .

LE28FV4001T : Ordering number : EN*5468 CMOS LSI LE28FV4001M, T, R-20/25 4MEG (52488 × 8 Bits) Flash Memory Preliminary Overview The LE28FV4001M, T, R Series are 4 MEG flash memory products that feature a 542488-word × 8-bit organization and 3.3 V single-voltage power supply operation. CMOS peripheral circuits were adopted for high speed, low power, and ease of use. The LE28FV4001M also supports high-speed data rewriting by providing a sector (256 bytes) erase function. Package Dimensions unit: mm 3205-SOP32 [LE28FV4001M. T, R] Features • Highly reliable 2 layer polysilicon CMOS flash EEPROM process • Read and write operations using a 3.3 V single-voltage power supply • High-speed access: 200 and 250 .




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