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LET21004

Part Number LET21004
Manufacturer STMicroelectronics
Title RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
Description The LET21004 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band com...
Features ltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 °C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 1 TBD 150 -65 to +150 Unit V V A W °C °C THERMAL DATA (TCASE = 70 °C) Rth(j-c) Junction -Case Thermal Resistance TBD °C/W April, 15 2003 ...

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LET21008 : The LET21008 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2.1 GHz. LET21008 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™. LET21008’s superior linearity performance makes it an ideal solution for base station applications. PIN CONNECTION TOP VIEW ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc.




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