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FM150L

Formosa MS

Chip Schottky Barrier Diodes

Chip Schottky Barrier Diodes FM150L THRU FM160L Silicon epitaxial planer type Formosa MS SMA 0.185(4.8) 0.173(4.4) 0.0...


FM150L

Formosa MS


Octopart Stock #: O-662227

Findchips Stock #: 662227-F

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Description
Chip Schottky Barrier Diodes FM150L THRU FM160L Silicon epitaxial planer type Formosa MS SMA 0.185(4.8) 0.173(4.4) 0.012(0.3) Typ. Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-195
More View 00 / 228 Low leakage current. 0.067(1.7) 0.060(1.5) 0.110(2.8) 0.094(2.4) 0.165(4.2) 0.150(3.8) 0.040(1.0) Typ. 0.040 (1.0) Typ. Mechanical data Case : Molded plastic, JEDEC DO-214AC Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting P osition : Any Weight : 0.0015 ounce, 0.05 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER Forward rectified current www.DataSheet4U.com Forward surge current See Fig.1 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C CONDITIONS Symbol IO IFSM MIN. TYP. MAX. 1.0 30 0.5 10 Rq JA CJ TSTG -55 88 120 +150 o UNIT A A mA mA C / w pF o Reverse current Thermal resistance Diode junction capacitance Storage temperature VR = VRRM TA = 125o C Junction to ambient f=1MHz and applied 4vDC reverse voltage IR C SYMBOLS MARKING CODE SS15 SS16 VRRM 50 60 *1 VRMS 35 42 *2 VR *3 VF *4 Operating temperature (o C) -55 to +150 *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage (V) FM150L FM160L (V) (V) 50 60 (V) 0.60 RATING AND CHARACTERISTIC CURVES (FM150L THRU FM160L) FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT,(A) FIG.2-TYPICAL FORWARD CHARACTERISTICS 1.2 1.0 50 INSTANTANEOUS FORWARD CURRENT,(A) 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 180 200 10 3.0 1.0 Tj=25 C Pulse Width 300us 1% Duty Cycle AMBIENT TEMPERATURE,( C) FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 30 0.1 PEAK FORWARD SURGE CURRENT,(A) 24 .01 .1 .3 .5 .7 .9 1.1 1.3 1.5 18 Tj=25 C 8.3ms Single Half Sine Wave JEDEC method FORWARD VOLT AGE,(V) 12 6 FIG.5 - TYPICAL REVERSE 0 1 5 10 50 100 CHARACTERISTICS 100 NUMBER OF CYCLES AT 60Hz www.DataSheet4U.com FIG.4-TYPICAL JUNCTION CAPACITANCE 350 300 250 200 150 100 50 0 JUNCTION CAPACITANCE,(pF) REVERSE LEAKAGE CURRENT, (mA) 10 1.0 Tj=75 C .1 Tj=25 C .01 .05 .1 .5 1 5 10 50 100 .01 0 20 40 60 80 100 120 140 REVERSE VOLTAGE,(V) PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)






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