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NTD40


Part Number NTD40
Manufacturer EDI
Title HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
Description NTD HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE Peak...
Features s AMBIENT TEMPERATURE % RATED FWD CURRENT 100 75 50 25 0 0 25 50 75 100 (OC) 125 150 AMBIENT TEMPERATURE FIG.2 NON-REPETITIVE SURGE CURRENT RATINGS 0.1SEC 100 1.0SEC % MAXIMUM SURGE 75 50 25 www.DataSheet4U.com 0 1 2 3 4 5 6 7 8 9 10 20 30 40 50 60 CYCLES(60 Hz) FIG.3 PACKAGE STYLE ...

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NTD4805N : www.DataSheet4U.com NTD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices V(BR)DSS 30 V http://onsemi.com RDS(on) MAX 5.0 mW @ 10 V 7.4 mW @ 4.5 V D ID MAX 88 A Applications • CPU Power Delivery • DC−DC Converters • Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (RqJA) (Note 1) Power Dissipation (RqJA) (Note 1) Continuous Drain Current (RqJA) (Note 2) Power Dissipation (RqJA) (Note 2) Continuous Drai.

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NTD4808N : NTD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices V(BR)DSS http://onsemi.com RDS(ON) MAX 8.0 mW @ 10 V ID MAX 63 A • CPU Power Delivery • DC−DC Converters www.DataSheet4U.com • Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation .

NTD4809N : NTD4809N, NVD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC Q101 Qualified − NVD4809N • These Devices are Pb−Free and are RoHS Compliant Applications • CPU Power Delivery • DC−DC Converters • Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (RqJA) (Note 1) Power Dissipation (RqJA) (Note 1) Continuous Drain Current (RqJA) (Note 2) Power Dissipation (RqJA) (Note 2) Continuous Drain Current (RqJC) (No.

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NTD4813NH : www.DataSheet4U.com NTD4813NH Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices http://onsemi.com V(BR)DSS 30 V RDS(ON) MAX 13 mW @ 10 V 25.9 mW @ 4.5 V D ID MAX 40 A Applications • CPU Power Delivery • DC−DC Converters • High Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuo.

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NTD4815NH : www.DataSheet4U.com NTD4815NH Power MOSFET 30 V, 35 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices http://onsemi.com V(BR)DSS 30 V RDS(ON) MAX 15 mW @ 10 V 27.7 mW @ 4.5 V D 35 A ID MAX Applications • CPU Power Delivery • DC−DC Converters • High Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous .




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