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SSF6808 Datasheet PDF


Part Number SSF6808
Manufacturer Silikron Semiconductor Co
Title Power switching application
Description The SSF6808 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases ...
Features Max. 110 80 400 150 2.0 ±20 31 ② 480 TBD
  –55 to +150 Units A W W/ْ C V v/ns mJ Continuous drain current,VGS@10V Continuous drain current,VGS@10V Pulsed drain current ① Power dissipation Linear derating factor Gate-to-Source voltage Peak diode recovery voltage Single pulse avalanche energy Repetiti...

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Datasheet SSF6808 PDF File








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SSF6807 : The SSF6807 is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF6807 is assembled in high reliability and qualified assembly house. Application: „ Power switching application SSF6807 TOP View (T0-220) Absolute Maximum Ratings Parameter ID@Tc=25 ْC ID@Tc=100ْC IDM PD@TC=25ْC VGS EAS EAR dv/dt TJ TSTG Thermal Resistance Parameter RθJC RθJA Junction-to-case Junction-to-ambient Min. — — Typ. 0.83 — Max. — 62 Units ْC/W Continuous drain current,VGS@10V Continuous drain current,VGS@10V Pulsed drain current ① Power dissipation Linear derating factor Gate-.

SSF6808 : The SSF6808 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF6808 is assembled in high reliability and qualified assembly house. APPLICATIONS  Power switching application SSF6808 Top View (TO-220) Absolute Maximum Ratings Parameter I DB @T B B c =25ْ B C Continuous drain current,VGS@10V I B D @T cB B =100Cْ B Continuous drain current,VGS@10V IDMB B Pulsed drain current ① Power dissipation P B D @T CB B =25ْC B Linear derating factor V GSB B dv/dt Gate-to-Source voltage Peak diode recovery voltage E ASB B E ARB B T JB.

SSF6808A : The SSF6808A is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF6808A is assembled in high reliability and qualified assembly house. APPLICATIONS  Power switching application SSF6808A Top View (TO-263) Absolute Maximum Ratings Parameter ID@Tc=25ْ C Continuous drain current,VGS@10V ID@Tc=100Cْ Continuous drain current,VGS@10V IDM Pulsed drain current ① Power dissipation PD@TC=25ْC Linear derating factor VGS Gate-to-Source voltage dv/dt Peak diode recovery voltage EAS EAR TJ TSTG Single pulse avalanche energy ② Repetitive avalanche ene.

SSF6808D : It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating .




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