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TPC8121


Part Number TPC8121
Manufacturer Toshiba Semiconductor
Title Silicon P-Channel MOSFET
Description TPC8121 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS V) TPC8121 Notebook PC Applications Lithium Ion Battery Applications Po...
Features 4 1.9 W 1.0 W 82 mJ −11 A 0.030 mJ 150 °C −55 to 150 °C JEDEC ⎯ JEITA ⎯ TOSHIBA 2-6J1B Weight: 0.080 g (typ.) Circuit Configuration 8765 1234 Note: Note 1, Note 2, Note 3 and Note 4: See the next page. Using continuously under heavy loads (e.g. the application of high tempera...

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TPC8120 : TPC8120 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPC8120 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 2.6 mΩ (typ.) • High forward transfer admittance: |Yfs| =80 S (typ.) • Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (t = 10 s) (Note 2a) Dra.

TPC8122 : TPC8122 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ) TPC8122 Lithium Ion Battery Applications Notebook PC Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 6.3 mΩ (typ.) • High forward transfer admittance: |Yfs| = 30S (typ.) • Low leakage current: IDSS = −10μA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t.

TPC8123 : TPC8123 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) www.DataSheet4U.com TPC8123 Lithium Ion Battery Applications Power Management Switch Applications • • • • • Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 7.0 mΩ (typ.) High forward transfer admittance: |Yfs| = 36 S (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −0.5 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating −30 −30 −2.

TPC8124 : .

TPC8125 : TPC8125 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPC8125 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 10 mΩ (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −0.5mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse a.

TPC8126 : TPC8126 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPC8126 Lithium Ion Battery Applications Power Management Switch Applications • • • • Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 7.5 mΩ (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −0.5mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR Tch Tstg Rating −30 −30 −25/+20 −11 −44 1.9 1.0 79 −11 150 −55 to 150 Unit V V V A W W mJ A °C °C Pulse (N.

TPC8127 : TPC8127 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPC8127 Lithium Ion Battery Applications Power Management Switch Applications • • • • Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 5 mΩ (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −0.5mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR Tch Tstg Rating −30 −30 −25/+20 −13 −52 1.9 1.0 110 −13 150 −55 to 150 Unit V V V A W W mJ A °C °C Pulse (No.

TPC8128 : .

TPC8129 : MOSFETs Silicon P-Channel MOS (U-MOS) TPC8129 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 17 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) (4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.2 mA) 3. Packaging and Internal Circuit TPC8129 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation.




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