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K4S56163LF-XZN


Part Number K4S56163LF-XZN
Manufacturer Samsung semiconductor
Title 4M x 16Bit x 4 Banks Mobile SDRAM
Description The K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's h...
Features
• 2.5V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sam...

File Size 143.57KB
Datasheet K4S56163LF-XZN PDF File








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K4S56163LF-XZC : The K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. ORDERING INFORMATION Part No. K4S56163LF-X(Z)E/N/G/C/L/F75 K4S56163LF-X(Z)E/N/G/C/L/F1H K4S56163LF-X(Z)E/N/G/C/L/F1L Max Freq. 133MHz(CL=3) 105MHz(CL=2) 105MHz(CL=3)*1 LVCMOS 54 BOC Leaded .

K4S56163LF-XZE : The K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. ORDERING INFORMATION Part No. K4S56163LF-X(Z)E/N/G/C/L/F75 K4S56163LF-X(Z)E/N/G/C/L/F1H K4S56163LF-X(Z)E/N/G/C/L/F1L Max Freq. 133MHz(CL=3) 105MHz(CL=2) 105MHz(CL=3)*1 LVCMOS 54 BOC Leaded .

K4S56163LF-XZF : The K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. ORDERING INFORMATION Part No. K4S56163LF-X(Z)E/N/G/C/L/F75 K4S56163LF-X(Z)E/N/G/C/L/F1H K4S56163LF-X(Z)E/N/G/C/L/F1L Max Freq. 133MHz(CL=3) 105MHz(CL=2) 105MHz(CL=3)*1 LVCMOS 54 BOC Leaded .

K4S56163LF-XZG : The K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. ORDERING INFORMATION Part No. K4S56163LF-X(Z)E/N/G/C/L/F75 K4S56163LF-X(Z)E/N/G/C/L/F1H K4S56163LF-X(Z)E/N/G/C/L/F1L Max Freq. 133MHz(CL=3) 105MHz(CL=2) 105MHz(CL=3)*1 LVCMOS 54 BOC Leaded .

K4S56163LF-XZL : The K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. ORDERING INFORMATION Part No. K4S56163LF-X(Z)E/N/G/C/L/F75 K4S56163LF-X(Z)E/N/G/C/L/F1H K4S56163LF-X(Z)E/N/G/C/L/F1L Max Freq. 133MHz(CL=3) 105MHz(CL=2) 105MHz(CL=3)*1 LVCMOS 54 BOC Leaded .




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