DatasheetsPDF.com

GS8160V18CT Datasheet PDF

GSI Technology
Part Number GS8160V18CT
Manufacturer GSI Technology
Title 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
Description Applications The GS8160V18/36CT is an 18,874,368-bit (16,777,216-bit for x32 version) high performance synchronous SRAM with a 2-bit burst address...
Features
• FT pin for user-configurable flow through or pipeline operation
• Single Cycle Deselect (SCD) operation
• 1.8 V +10%/
  –10% core power supply
• 1.8 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pi...

File Size 598.15KB
Datasheet PDF File GS8160V18CT PDF File


GS8160V18CT GS8160V18CT GS8160V18CT




Similar Ai Datasheet

GS8160V18AT : Applications The GS8160V18/32/36AT is an 18,874,368-bit (16,777,216-bit for x32 version) high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support. Byte Write and Global Write Byte write operation is performed by using Byte Write enable (BW) input combined with one or more individual byte write signals (Bx). In addition, Global Write (GW) is available for writing all bytes at one time, regardless of the Byte Write control inputs. Sleep Mode Low power .




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)