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AWT6166


Part Number AWT6166
Manufacturer ANADIGICS
Title GSM850/GSM900/DCS/PCS Quad Band Power Amplifier
Description As with previous generations, the AWT6166 integrated CMOS power control scheme simplifies the design of the transmitter by eliminating the need fo...
Features


• Integrated Vreg (regulated supply) Harmonic Performance ≤ -25 dBm High Efficiency (PAE) at Pmax: -GSM850, 54% -GSM900, 56% -DCS, 53% -PCS, 51% +35 dBm GSM850/900 Output Power at 3.5 V +33 dBm DCS/PCS Output Power at 3.5 V 55 dB dynamic range GPRS Class 12 Capable ADVANCED PRODUCT INFORMATION -...

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AWT6166R : As with previous generations, the AWT6166R integrated CMOS power control scheme simplifies the design of the transmitter by eliminating the need for external power control circuitry. The AWT6166R input and output terminals are internal matched to 50 ohms and DC blocked, VCC2 reducing the number of external components required in the final application. Both PA die, GSM850/900 and DCS/PCS, are fabricated using state of the art InGaP HBT technology, known for it is proven reliability and temperature stability. DCS/PCSIN BS TX EN MATCH MATCH DCS/PCSOUT CMOS BIAS/Integrated Power Control VBATT CEXT VRAMP VCC_OUT H(s) GSM850/900IN MATCH MATCH GSM850/900OUT VCC2 Figure 1: Block Diagra.

AWT6167 : As with previous generations, the AWT6167 integrated CMOS power control scheme simplifies the design of the transmitter by eliminating the need for external power control circuitry. The AWT6167 input and output terminals are internal matched to 50 ohms and DC blocked, reducing the VCC2 number of external components required in the final application. Both PA die, GSM900 and DCS, are fabricated using state of the art InGaP HBT technology, known for it is proven reliability and temperature stability. DCSIN BS TX EN MATCH MATCH DCSOUT CMOS BIAS/Integrated Power Control VBATT VREG VRAMP GSM900IN VCC_OUT H(s) MATCH MATCH GSM900OUT VCC2 Figure 1: Block Diagram 01/2005 AWT6167 VCC2 GND.

AWT6167R : As with previous generations, the AWT6167R integrated CMOS power control scheme simplifies the design of the transmitter by eliminating the need for external power control circuitry. The AWT6167R input and output terminals are internal matched to 50 ohms and DC blocked, VCC2 reducing the number of external components required in the final application. Both PA die, GSM900 and DCS, are fabricated using state of the art InGaP HBT technology, known for it is proven reliability and temperature stability. DCS_IN BS TX_EN VBATT CEXT VRAMP GSM900_IN MATCH MATCH DCS_OUT CMOS BIAS/Integrated Power Control VCC_OUT H(s) MATCH MATCH GSM900_OUT VCC2 Figure 1: Block Diagram 06/2005 AWT6167R VC.

AWT6168 : This power amplifier module supports dual, tri and quad band applications for GMSK and 8-PSK modulation schemes using a polar architecture. There are two amplifier chains, one to support GSM850/900 bands, the other for DCS/PCS bands. The module includes an internal reference voltage and integrated power control scheme for use in both GMSK and 8-PSK operation. This facilitates fast and easy production calibration and reduces the number of external components required to complete a power control function. The amplifier’s power control range is typically 55 dB, with the output power set by applying an analog voltage to VRAMP. All of the RF ports for this device are internally matched to 50 Ω . .




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