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K4T51163QB-GCD5


Part Number K4T51163QB-GCD5
Manufacturer Samsung semiconductor
Title 512Mb B-die DDR2 SDRAM
Description 2.3 Addressing 3. Absolute Maximum Rating 4. AC & DC Operating Conditions & Specifications Page 2 of 28 Rev. 1.5 July 2005 512Mb B-die DDR2 S...
Features Speed CAS Latency tRCD(min) tRP(min) tRC(min) DDR2-533 4-4-4 4 15 15 55 DDR2-400 3-3-3 3 15 15 55 Units tCK ns ns ns
• JEDEC standard 1.8V ± 0.1V Power Supply
• VDDQ = 1.8V ± 0.1V
• 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/ pin
• 4 Banks
• Posted CAS
• Programmable CAS Latency: 3, 4,...

File Size 633.79KB
Datasheet K4T51163QB-GCD5 PDF File








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