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BH616UV8011 Datasheet PDF


Part Number BH616UV8011
Manufacturer Brilliance Semiconductor
Title Ultra Low Power/High Speed CMOS SRAM
Description The BH616UV8011 is a high performance, ultra low power CMOS Static Random Access Memory organized as 524,288 by 16 bits and operates in a wide ran...
Features Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V Ÿ Ultra low power consumption : VCC = 3.6V Operation current : 12mA (Max.)at 55ns 2mA (Max.) at 1MHz Standby current : 2.5uA (Typ.) at 3.0V/25OC VCC = 1.2V Data retention current : 1.2uA (Typ.) at 25OC Ÿ High speed access time : -55 55ns (Max.) at VCC=...

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Datasheet BH616UV8011 PDF File








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BH616UV8010 : The BH616UV8010 is a high performance, ultra low power CMOS Static Random Access Memory organized as 524,288 by 16 bits and operates in a wide range of 1.65V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical operating current of 1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at 1.65V/85OC. Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2) and active LOW output enable (OE) and three-state output drivers. The BH616UV8010 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BH616UV8010 is avai.




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