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3SK74 Datasheet PDF

NEC Electronics
Part Number 3SK74
Manufacturer NEC Electronics
Title MOSFET
Description ...
Features ...

File Size 97.24KB
Datasheet PDF File 3SK74 PDF File


3SK74 3SK74 3SK74




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3SK101 : : ) J 3SK101 SILICON N CHANNEL DUAL GATE MOS TYPE TV TUNER, VHF RF AMPLIFIER APPLICATIONS TV TUNER VHF MIXER APPLICATIONS. FEATURES . Superior Cross Modulation Performanc e. . Low Reverse Transfer Capacitance :C r ss =0.03 P F(Typ.) . Low Noise Figure : NF=2. 2dB(Typ. Unit in mm 4 s 0.6 01 1 0.3 1 r-. (( " "t=%J +4- 0.3 1 .s | 0.75 jf asMiis . 3 If 0.6 5 2 S •1AXIMUT1 RATINGS (Ta=25 C) CHARACTERISTIC Drain-Source Voltage Gatel-Source Voltage Gate2-Source Voltage Drain Current Drain Power Dissipation Channel Temperature Storage Temperature Range SYMBOL RATING VDS 20 V G1S ±9 V G2S ±9 id 30 pd Teh Tstg 200 125 -55- +125 UNIT V V V mA mW u c °c - c5 s-f .

3SK102 : : ) ) SILICON N CHANNEL DUAL GATE MOS TYPE . A 3SK102 TV TUNER, UHF RF AMPLIFIER APPLICATIONS. TV TUNER, UHF MIXER APPLICATIONS. FEATURES . Superior Cross Modulation Performance. . Low Reverse Transfer Capacitance : C rs s=0. 03pF(Max. . Low Noise Figure : NF=4. 0dB(Typ. Unit in mm MAXIMUN RATINGS (Ta=25°c) CHARACTERISTIC Drain-Source Voltage Gatel-Source Voltage Gate2-Source Voltage Drain Current Drain Power Dissipation Channel Temperature Storage Temperature Range SYMBOL RATING VDS 20 V.GlS VG2S~ ID 30 PD Teh Lstg 200 125 -55-+125 UNIT 4.2 MAX 1. GATE 1 2. SOURCE 3. DRAIN mA 4. GATE 2 mW JEDEC EI AJ TOSHIBA 2-4 F 1 We i gh t QO. ELECTRICAL CHARACTERISTICS (Ta=.

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3SK114 : ) 3SK114 SILICON N CHANNEL DUAL GATE MOS TYPE TV TUNER, VHF RF AMPLIFIER APPLICATIONS. TV TUNER VHF MIXER APPLICATIONS. Unit in mm FEATURES: . Superior Cross Modulation Performance. . Low Reverse Transfer Capacitance : C rss=Q-03pF (Typ.) . Low Noise Figure : NF=1 ,4dB(Typ. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Drain-Source Voltage Gate 1 - Source Voltage Gate 2 - Source Voltage Drain Current Drain Power Dissipation Channel Temperature Storage Temperature Range SYMBOL VDS VG1S VG2S Id Pd Teh Tstg ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL Gate 1 Leakage Current IG1SS Gate 2 Leakage Current IG2SS Drain-Source Voltage V(BR)DSX Drain Current Gatel-Source Cut-.

3SK115 : 3SK115 SILICON N CHANNEL DUAL GATE MOS TYPE TV TUNER, UHF RF AMPLIFIER APP LICATION. Unit in mm 4 FEATURES . Superior Cross Modulation Pe rf ormance . Low Crss : C rss =0.03pF . Low Noise : NF=3.2dB •S Q6 0.3 U M£LaJ 9.8 MI N. 3 y^O.75 "||."0-6 5 CO' 2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Drain-Source Voltage Gatel-Source Voltage Gate2-Source Voltage Drain Current Power Dissipation Channel Temperature Storage Temperature Range SYMBOL VDS vgis VG2S id Pd Teh T stg ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL Gatel Leakage Current IG1SS Gate2 Leakage Current IG2SS Drain Source Voltage V(BR)DSX RATING UNIT 15 V ±8 V ±8 V 30 mA 200 mW 125 °C -.

3SK121 : GaAs N- CHANNEL DUAL GATE MES TYPE 3SK121 TV TUNER, UHF RF AMPLIFIER APPLICATIONS. Unit in mm FEATURES: . Superior Cross Modulation Performance . Low Reverse Transfer Capacitance : C rs s =20fF (Typ .) . Low Noise Figure : NF= 1.5dB (Typ. ) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Drain-Source Voltage Gatel-Source Voltage SYMBOL VDS vgis RATING 10 -6 UNIT V V —4 An g 0.6 CO' 0.3 i=cn \$ i. 1 ft 44a*—s 9.8 MIN. 3 Jlj.0.7 5 .11., 0.65 2 X s D ci ^: -r-r. C5 ' J .2 MAX. r£; Gate2-Source Voltage Drain Current Power Dissipation Channel Temperature Storage Temperature Range VG2S Id pd Tch T stg ELECTRICAL CHARACTERISTICS (Ta=25°C) -6 V 50 mA 200 mW 12.

3SK122 : w w w .d e e h s a t a . u t4 m o c www.DataSheet4U.com .

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3SK131 : DATA SHEET SHEET DATA MOS FIELD EFFECT TRANSISTOR 3SK131 RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES • Suitable for use as RF amplifier in VHF TV tuner. • Low Crss : 0.05 pF TYP. • High Gps : 23 dB TYP. • Low NF : 1.3 dB TYP. PACKAGE DIMENSIONS (Unit: mm) 0.4 −0.05 0.4 −0.05 0.4 −0.05 0.16 −0.06 +0.1 2.8 −0.3 1.5 2 +0.2 +0.1 +0.1 +0.2 −0.1 Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDSX VG1S VG2S ID PT Tch Tstg 20 V V V mA mW 0.6 −0.05 +0.1 25 200 125 5° 5° 5° 0 to 0.1 55 to +125 C C +0.2 −3.1 1.1 0..

3SK134B : DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK134B RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • High Power Gain : • Low Noise Figure : Gps = 23.0 dB TYP. (@ = 900 MHz) NF = 2.4 dB TYP. (@ = 900 MHz) PACKAGE DIMENSIONS (Unit : mm) 2.8 +0.2 – 0.3 0.4 +0.1 – 0.05 • Suitable for use as RF amplifier in UHF TV tuner. • Automatically Mounting : • Surface Mount Package : Embossed Type Taping 4 Pins Mini Mold (EIAJ: SC-61) 2.9±0.2 0.95 1.5 +0.2 – 0.1 2 (1.8) Gate1 to Source Voltage Gate2 to Source Voltage Gate1 to Drain Voltage Gate2 to Drain Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature *1 :.

3SK135A : DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK135A RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES • Suitable for use as RF amplifier in UHF TV tuner. • Low Crss : 0.02 pF TYP. • High Gps : 18 dB TYP. • Low NF : 2.7 dB TYP. PACKAGE DIMENSIONS in millimeters 0.4+0.1 –0.05 2 2.8+0.2 –0.3 1.5+0.2 –0.1 –0.06 0.16 +0.1 Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDSX VG1S* VG2S* ID PT Tch Tstg 5˚ 0 to 0.1 20 ± 10 ± 10 25 200 150 –65 to +150 *RL ≥ 10 kΩ V V V mA mW ˚ C ˚ C 1 0.6+0.1 –0.05 5˚ +0.1 5˚ 0.4–0.05 +0.2 1.1–0.1 0.8.

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