BD302 Datasheet

BD302 Silicon PNP Power Transistor

·DC Current Gain - : hFE = 30(Min.)@ IC= -3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min.) ·Complement to Type BD301 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages up to 25W, vertical deflection circu.

Features

er Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -0.3A ICEO Collector Cutoff Current VCE= -30V; IB= 0 ICBO Collector Cutoff Current VCB= -40V; IE= 0; TC= 150℃ IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -3A; VCE= -2V fT Current-Gain—Bandwidth Product IC= -0.3A; VCE= -3V BD302 MIN MAX UNIT -45 V -1.0 V -1.5 V .