IXFH110N10P Datasheet

IXFH110N10P PolarHT HiPerFET Power MOSFET

PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Preliminary Data Sheet Symbol VDSS VDGR VGSS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient .

Features

z Fast intrinsic diode z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Advantages z Easy to mount z Space savings z High power density © 2005 IXYS All rights reserved DS99212A(01/05) IXFH 110N10P IXFV 110N10P IXFV 110N10PS www.DataSheet4U.com Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 30 40 3550 S pF TO-247 (IXFH) Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Q.