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PAD50

Micross

PicoAmp Diode

PAD50 LOW LEAKAGE PICO-AMP DIODE Linear Systems replaces discontinued Siliconix PAD50 The PAD50 is a low leakage Pico-A...


Micross

PAD50

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Description
PAD50 LOW LEAKAGE PICO-AMP DIODE Linear Systems replaces discontinued Siliconix PAD50 The PAD50 is a low leakage Pico-Amp Diode packaged in hermetic TO-72 The PAD50 extremely low-leakage diode provides a superior alternative to conventional diode technology when reverse current (leakage) must be minimized. The PAD50 features a leakage current of -50 pA and is well suited for use in applications such as input protection for operational amplifiers. FEATURES  DIRECT REPLACEMENT FOR SILICONIX PAD50  REVERSE BREAKDOWN VOLTAGE  ULTRALOW LEAKAGE  REVERSE CAPACITANCE  ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation   MAXIMUM CURRENT Forward Current (Note 1)    BVR ≥ ‐45V  ≤ 50 pA  Crss ≤ 2.0pF  PAD50 Benefits: ƒ ƒ ƒ Negligible Circuit Leakage Contribution Circuit “Transparent” Except to Shunt High-Frequency Spikes Simplicity of Operation ‐65°C to +150°C  ‐55°C to +135°C  300mW  50mA  PAD50 Applications: ƒ ƒ Op Amp Input Protection Multiplexer Overvoltage Protection   PAD50 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTICS  MIN.  TYP.  BVR  Reverse Breakdown Voltage  ‐45  ‐‐  VF  Forward Voltage  ‐‐  0.8  CrSS  Total Reverse Capacitance  ‐‐  1.5  IR  Maximum Reverse Leakage Current  ‐‐  ‐‐  Click To Buy MAX.  ‐‐  1.5  2  ‐50  UNITS  V  V  pF  pA  TO-72 (Bottom View) CONDITIONS  IR = ‐1µA  IF = 5mA  VR = ...




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