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2SB1224


Part Number 2SB1224
Manufacturer Sanyo Semicon Device
Title PNP/NPN Transistors
Description Ordering number:EN2210B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB1224/2SD1826 Driver Applications Applications · Suitable for ...
Features
· High DC current gain.
· Large current capacity and wide ASO.
· Micaless package facilitaing mounting. Package Dimensions unit:mm 2041A [2SB1224/2SD1826] ( ) : 2SB1224 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-...

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2SB1220 : Transistor 2SB1220 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD1821 2.1±0.1 Unit: mm q q q High collector to emitter voltage VCEO. Low noise voltage NV. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.425 1.25±0.1 0.425 0.65 1 2.0±0.2 1.3±0.1 0.65 3 2 0.9±0.1 Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature VCBO VCEO VEBO ICP IC PC Tj Tstg –150 –150 –5 –100 –50 150 150 –55 ~ +150 V V V mA m.

2SB1220 : SMD Type Silicon PNP Epitaxial Planar Type 2SB1220 Transistors Features High collector-emitter voltage VCEO Low noise voltage NV 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating -150 -150 -5 -100 -50 150 150 -55 to +150 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector-emitter voltage Emitter-base voltage Collector-base cutoff current Forward current transfer ratio Collector-emitter saturation voltage Transition freq.

2SB1221 : Transistor 2SB1221 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC3941 Unit: mm 5.0±0.2 4.0±0.2 q q Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –250 –200 –5 –100 –70 1 150 –55 ~ +150 Unit V V V mA mA W ˚C ˚C 1 2 3 2.54±0.15 1.27 0.45 –0.1 1.27 +0.15 13.5±0.5 0.7±0.1 0.7±0.2 8.0±0.2 s Features 0.45 –0.1 +0.15 2.3±0.2 .

2SB1221 : Transistor 2SB1221 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC3941 Unit: mm 5.0±0.2 4.0±0.2 q q Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –250 –200 –5 –100 –70 1 150 –55 ~ +150 Unit V V V mA mA W ˚C ˚C 1 2 3 2.54±0.15 1.27 0.45 –0.1 1.27 +0.15 13.5±0.5 0.7±0.1 0.7±0.2 8.0±0.2 s Features 0.45 –0.1 +0.15 2.3±0.2 .

2SB1223 : Ordering number:EN2209C PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB1223/2SD1825 Driver Applications Applications · Suitable for use in control of motor drivers, printer hammer drivers, and constant-voltage regulators. Features · High DC current gain. · Large current capacity and wide ASO. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SB1223/2SD1825] ( ) : 2SB1223 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperatu.

2SB1223 : ·With TO-220F package ·Complement to type 2SD1825 ·High DC current gain. ·Large current capacity and wide ASO. ·DARLINGTON APPLICATIONS ·Suitable for use in control of motor drivers, printer hammer drivers,and constant-voltage regulators. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -70 -60 -6 -4 -6 20 W .

2SB1223 : ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -2A) ·Large Current Capability and Wide ASO. ·Complement to Type 2SD1825 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in control of motor drivers, printer hammer drivers, and constant-voltage regulators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -6 A 2 W 20 1.

2SB1225 : .

2SB1225 : ·With TO-220F package ·Complement to type 2SD1827 ·High DC current gain. ·Large current capacity and wide ASO. ·Low saturation voltage. ·DARLINGTON APPLICATIONS ·Suitable for use in control of motor drivers, printer hammer drivers, relay drivers, and constant-voltage regulators. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector dissipation 2 Tj Tstg Junction temperature Storage temperature 150 -55~150 CONDITIONS Open emitter Open base Open col.

2SB1225 : ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -5A) ·Large Current Capability and Wide ASO. ·Low collector-to-emitter saturation voltage ·Complement to Type 2SD1827 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in control of motor drivers, printer hammer drivers, and constant-voltage regulators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=2.

2SB1226 : Ordering number:EN2212B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB1226/2SD1828 Driver Applications Applications · Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. Package Dimensions unit:mm 2041A [2SB1226/2SD1828] Features · High DC current gain. · Large current capcity and wide ASO. · Micaless pakcage facilitating mounting. ( ) : 2SB1226 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Sy.

2SB1226 : ·With TO-220F package ·Complement to type 2SD1828 ·High DC current gain. ·Large current capacity and wide ASO. ·DARLINGTON APPLICATIONS ·Motor drivers,printer hammer drivers,relay drivers,voltage regulator control. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector dissipation 2 Tj Tstg Junction temperature Storage temperature 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -110 -100 -6 -3 -5 20 W UNIT V V V A A SavantIC Sem.

2SB1226 : ·High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC= -1.5A) ·Large Current Capability and Wide ASO. ·Complement to Type 2SD1828 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in control of motor drivers, printer hammer drivers, and constant-voltage regulators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -5 A 2 W 20.

2SB1227 : Ordering number:EN2213B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB1227/2SD1829 Driver Applications Applications · Suitable for use in control of motor drivers, printer hammer drivers, relay drivers, and constant-votlage regulators. Package Dimensions unit:mm 2041A [2SB1227/2SD1829] Features · High DC current gain. · Large current capacity and wide ASO. · Low saturation voltage. · Micaless package facilitating mounting. ( ) : 2SB1227 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) C.

2SB1227 : ·With TO-220F package ·Complement to type 2SD1829 ·High DC current gain. ·Large current capacity and wide ASO. ·Low saturation voltage. ·DARLINGTON APPLICATIONS ·Suitable for use in control of motor drivers, printer hammer drivers,relay drivers,and constant-voltage regulators. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open.

2SB1227 : ·High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC= -2.5A) ·Large Current Capability and Wide ASO. ·Complement to Type 2SD1829 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in control of motor drivers, printer hammer drivers, and constant-voltage regulators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -8 A 2 W 2.




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