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2SB1624 Datasheet PDF


Part Number 2SB1624
Manufacturer Sanken electric
Title Silicon PNP Transistor
Description (7 0 Ω ) E Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1624 –110 –110 –5 –6 –1 60(Tc=25°C) 150 –55 t...
Features VBB2 (V) 5 IB1 (mA)
  –5 IB2 (mA) 5 ton (µs) 1.1typ tstg (µs) 3.2typ tf (µs) 1.1typ Weight : Approx 6.0g a. Type No. b. Lot No. I C
  – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V)
  –6 A
  –5m A m 5mA
  –1
  –0. A .4m
  –0
  –0 .3 m A V CE ( sa t )
  – I B Characteristics ...

File Size 24.88KB
Datasheet 2SB1624 PDF File








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2SB1622 : Power Transistor 2SB1622 Absolute Maximum Ratings (Ta=25ºC) Symbol Ratings Unit VCBO –200 V VCEO –200 V VEBO IC –5 V –15 A IB –1 A PC 85 (Tc=25ºC) W Tj 150 ºC Tstg –55 to +150 ºC Electrical Characteristics (Ta=25ºC) Symbol Test Conditions Ratings min typ max Unit ICBO VCB = – 200V –100 µA IEBO VEB = – 5V –100 µA VCEO IC = – 30mA – 200 V hFE* VCE = – 4V, IC = –10A 5000 30000 VCE(sat) IC = –10A, IB = –10mA –2.5 V VBE(sat) IC = –10A, IB = –10mA –3.0 V fT VCE = –12V, IE = 2A 60 MHz COB VCB = –10V, f = 1MHz 270 pF * Rank: O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) Typical Switching Characteristics VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) .

2SB1623 : Power Transistors 2SB1623 Silicon PNP epitaxial planer type Unit: mm For power amplification 9.9±0.3 4.6±0.2 2.9±0.2 • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: 5 kV 13.7±0.2 4.2±0.2 Solder Dip 15.0±0.5 I Features φ 3.2±0.1 I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 25°C Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating −60 −60 −5 −8 −4 40 2.0 150 −55 to +150 °C °C Unit V V V A A W 1.4±0.2 1.6±0.2 0.8±0.1 3.0±0..

2SB1623A : Power Transistors 2SB1623A Silicon PNP epitaxial planar type For power amplification 9.9±0.3 Unit: mm 4.6±0.2 2.9±0.2 3.0±0.5 ■ Features • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: 5 kV 15.0±0.5 φ 3.2±0.1 13.7±0.2 4.2±0.2 Solder Dip ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature TC = 25°C Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −80 −80 −5 −4 −8 40 2.0.

2SB1624 : ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= -110V(Min) ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -5A ·Complement to Type 2SD2493 ·Minimum Lot-to-Lot variations for robust device performance and reliable operatio APPLICATIONS ·Designed for audio,series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -110 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 60 W 150 ℃ Tstg Storage Temperature Range.

2SB1624 : ·With TO-3PN package ·Complement to type 2SD2493 APPLICATIONS ·Audio ,regulator and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -110 -110 -5 -6 -1 60 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Darlington Power Transistors CHA.

2SB1625 : (7 0 Ω ) E Darlington sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1625 –110 –110 –5 –6 –1 60(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C 2SB1625 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=–110V VEB=–5V IC=–30mA VCE=–4V, IC=–5A IC=–5A, IB=–5mA IC=–5A, IB=–5mA VCE=–12V, IE=0.5A VCB=–10V, f=1MHz 2SB1625 –100max –100max –110min 5000min∗ –2.5max –3.0max –100typ –110typ V V 16.2 B Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2494) Application : Audio, Series Regulator and General Purpose (Ta=25°C) Unit External Dimensions FM100(TO3P) 0.8±0.2 15.6±0.2 5.5±0.2 3.

2SB1625 : ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= -110V(Min) ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -5A ·Complement to Type 2SD2494 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio,series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -110 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 60 W 150 ℃ Tstg Storage Temperature Rang.

2SB1625 : ·With TO-3PML package ·Complement to type 2SD2494 APPLICATIONS ·Audio ,regulator and general purpose PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Maximum absolute ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -110 -110 -5 -6 -1 60 150 -55~150 UNIT V V V A A W 1 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Darlington Power Transistors CHARACTERISTICS Tj=25 u.

2SB1626 : (7 0 Ω ) E Darlington sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1626 –110 –110 –5 –6 –1 30(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C 2SB1626 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=–110V VEB=–5V IC=–30mA VCE=–4V, IC=–5A IC=–5A, IB=–5mA IC=–5A, IB=–5mA VCE=–12V, IE=0.5A VCB=–10V, f=1MHz 2SB1626 –100max –100max –110min 5000min∗ –2.5max –3.0max 100typ 110typ V V 13.0min B Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2495) Application : Audio, Series Regulator and General Purpose (Ta=25°C) Unit External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2.

2SB1626 : ·High DC Current Gain ·Low-Collector Saturation Voltage ·Complement to Type 2SD2495 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio,series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -110 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered.

2SB1626 : ·With TO-220F package ·Complement to type 2SD2495 APPLICATIONS ·For audio,series regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -110 -110 -5 -6 -1 30 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Darlington Power Transistors CHARACTE.

2SB1628 : of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks o.

2SB1628 : SMD Type PNP Silicon Epitaxial Transistor 2SB1628 Transistors Features High current capacitance. Low collector saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) * Base Current (DC) Base Current (pulse) * Total Power Dissipation Junction Temperature Storage temperature * PW 10 ms, Duty Cycle 50% Symbol VCBO VCEO VEBO IC(DC) Ic(Pulse) IB(DC) IB(Pulse) PT Tj Tstg Rating -20 -16 -6 -3 -5 -0.2 -0.4 2 150 -55 to +150 Unit V V V A A A A W www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.com/ SMD Type 2SB1628 Electrical Characteristics Ta = 25 Pa.

2SB1629 : Power Transistors 2SB1629 Silicon PNP epitaxial planar type For power amplification Unit: mm 4.6±0.2 s Features q q q φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C) Ratings –60 –60 –6 –6 –3 –1 40 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C 15.0±0.3 3.0±0.2 13.7–0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta.




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