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2SB1657


Part Number 2SB1657
Manufacturer NEC
Title Silicon PNP Transistor
Description DATA SHEET SILICON TRANSISTOR 2SB1657 AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS FEATURES • Low VCE(sat) VCE(sat) =...
Features
• Low VCE(sat) VCE(sat) = −0.15 V Max (@lC/lB = 0.5 A/25 mA) 3.8 ± 0.2 (0.149) PACKAGE DIMENSIONS in millimeters (inches) 8.5 MAX. 2.8 MAX. (0.334 MAX.) (0.110 MAX.) φ 3.2 ± 0.2 ( φ 0.126)
• High DC Current Gain hFE = 150 to 600 (@VCE = −2.0 V, lC = −0.5 A) 12.0 MAX. (0.472 MAX.) ABSOLUTE MAXIMUM...

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2SB1653 : Power Transistors 2SB1653 Silicon PNP triple diffusion planar type For power switching 7.5±0.2 Unit: mm 4.5±0.2 q q q High collector to emitter VCEO Low collector to emitter saturation voltage VCE(sat) Allowing automatic insertion with radial taping (TC=25˚C) Ratings –400 –400 –7 –1 – 0.5 1.5 150 –55 to +150 Unit V V V A A W ˚C ˚C 10.8±0.2 s Features 3.8±0.2 90° 0.65±0.1 0.85±0.1 2.5±0.1 1.0±0.1 0.7±0.1 0.7±0.1 0.8C 0.8C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 16.0±1.0 s Absolute .

2SB1655 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature -6 A 2 W 25 150 .

2SB1655 : ·With TO-220F package ·Excellent DC current gain characteristics ·Low collector saturation voltage ·Wide area of safe operation ·Complement to type 2SD2394 PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current ICM Collector current-peak PC Collector dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector Ta=25 TC=25 MAX -80 -60 -7 -3 -6 2 25 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Silicon PNP Power Tran.

2SB1657 : ·High Collector Current -IC= -5A ·High DC Current Gain- : hFE= 150~600@IC= -1A ·Low-Collector Saturation Voltage- : VCE(sat)= -0.15V(Max.)@IC= -0.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICP Collector Current-Pulse IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature Tstg Storage Temperature Rang.

2SB1657 : ·With TO-126 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For audio frequency amplifier and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current (DC) Ta=25 PT Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 10 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -30 -30 -6 -5 -8 -1 0.1 W UNIT V V V A A A SavantIC Semiconductor www.DataSheet4U.com Product Specific.

2SB1658 : DATA SHEET SILICON TRANSISTOR 2SB1658 AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS FEATURES • Low VCE(sat) VCE(sat) = −0.15 V Max (@lC/lB = 1.0 A/50 mA) 3.8 ± 0.2 (0.149) PACKAGE DIMENSIONS in millimeters (inches) 8.5 MAX. 2.8 MAX. (0.334 MAX.) (0.110 MAX.) φ 3.2 ± 0.2 ( φ 0.126) 12.0 MAX. (0.472 MAX.) • High DC Current Gain hEF = 150 to 600 (@VCE = −2.0 V, lC = −1.0 A) ABSOLUTE MAXIMUM RATINGS Maximum Voltage and Current (TA = 25 °C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse)* Base Current (DC) * PW ≤ 10ms, Duty Cycle ≤ 10 % Maximum Power Dissipation Total Power Dissipation (.

2SB1658 : ·With TO-126 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For audio frequency amplifier and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current (DC) Ta=25 PT Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 10 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -30 -30 -6 -5 -10 -2 0.1 W UNIT V V V A A A SavantIC Semiconductor www.DataSheet4U.com Product Specifi.

2SB1658 : ·High Collector Current -IC= -5A ·High DC Current Gain- : hFE= 150~600@IC= -1A ·Low-Collector Saturation Voltage- : VCE(sat)= -0.15V(Max.)@IC= -1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -5 A ICP Collector Current-Pulse -10 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperat.

2SB1658 : TO-126F PNP 。Silicon PNP transistor in a TO-126F Plastic Package.  / Features ;。 Low saturation voltage, high DC current gain. / Applications 。 Audio frequency power amplifier and switching applications. / Equivalent Circuit / Pinning 12 3 PIN1:Emitter PIN 2:Collector PIN 3:Base / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 2SB1658 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Current – Continuous(Pulse) Base Current - Continuous Collector Power Dissipation Collector Power Dissipation Junction T.

2SB1658 : Elektronische Bauelemente 2SB1658 PNP General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES High Current Amplifier and Switching Applications TO-126 1Emitter 2Collector 3Base A E F N L M K B H J C D G REF. A B C D E F G Millimeter Min. Max. 7.40 7.80 2.50 2.90 10.60 11.00 15.30 15.70 3.70 3.90 3.90 4.10 2.29 TYP. REF. H J K L M N Millimeter Min. Max. 1.10 1.50 0.45 0.60 0.66 0.86 2.10 2.30 1.17 1.37 3.00 3.20 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -30 Emitter - Base Voltage VEBO -6 Collector Current -.

2SB1658 : JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB1658 TRANSISTOR (PNP) TO – 126 FEATURES z Low VCE(sat) z High DC Current Gain MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -30 -30 -6 -5 1 125 150 -55~+150 1. EMITTER 2. COLLECTOR 3. BASE Unit V V V A W ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter b.

2SB1659 : (70Ω) E Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1659 –110 –110 –5 –6 –1 50(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SB1659 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=–110V VEB=–5V IC=–30mA VCE=–4V, IC=–5A IC=–5A, IB=–5mA IC=–5A, IB=–5mA VCE=–12V, IE=0.5A VCB=–10V, f=1MHz 2SB1659 –100max –100max –110min 5000min∗ –2.5max –3.0max 100typ 110typ V V MHz pF 12.0min 4.0max B Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2589) Application : Audio, Series Regulator and General Purpose (Ta=25°C) Unit External Dimensions MT-25(TO220) 3.0±0.2 10.2±.




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