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RJH60M2DPE

Part Number RJH60M2DPE
Manufacturer Renesas
Title IGBT
Description of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and ...
Features
 Short circuit withstand time (8 s typ.)
 Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)
 Built in fast recovery diode (100 ns typ.) in one package
 Trench gate and thin wafer technology
 High speed switching tf = 80 ns typ. (at VCC = 30...

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RJH60M2DPP-M0 : of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electro.




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