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NVD5117PL


Part Number NVD5117PL
Manufacturer ON Semiconductor
Title Power MOSFET
Description NVD5117PL MOSFET – Power, Single, P-Channel -60 V, 16 mW, -61 A Features • Low RDS(on) to Minimize Conduction Losses • High Current Capability •...
Features
• Low RDS(on) to Minimize Conduction Losses
• High Current Capability
• Avalanche Energy Specified
• AEC−Q101 Qualified
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage...

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NVD5117PL : ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous -61 A PD Total Dissipation @TC=25℃ 118 W TJ Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.3 UNIT ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Break.




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