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BC178B


Part Number BC178B
Manufacturer Comset Semiconductors
Title (BC177 - BC179) LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS
Description PNP BC177 – BC178 – BC179 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC177,BC178 and BC179 are silicon planar epitaxial PNP transistors mounte...
Features urrent VCB = -20 V IE = 0 V Tj = 150°C IC = -2 mA IB = 0 IC = -10 µA VBE = 0 -45 -25 -20 -50 -30 -25 -5 - -10 - µA VCEO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage V VCBO V VEBO Emitter-Base Breakdown IE = -10 µA Voltage IC = 0 V 18/10/2012 COMSET SEMICONDUCTO...

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BC178 : The BC177, BC178 and BC179 are silicon planar epitaxial PNP transistors in TO-18 metal case.They are suitable for use in driver audio stages, low noise input audio stages and as low power, high gain general purpose transistors. The complementary NPN types are respectively the BC107, BC108 and BC109. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCES VCEO VEBO IC ICM Pto t T stg Tj Collector-emitter Voltage (V BE = 0) Collector-emitter Voltage (IB = 0) Emitter-base Voltage (IC = 0) Collector Current Collector Peak Current Total Power Dissipation at T amb ≤ 25 °C Storage Temperature Junction Temperature BC177 – 50 – 45 V al u e BC178 – 30 – 25 –5 – 100 – 200.

BC178 : Collector -Emitter Voltage Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Power Dissipation@ Ta=25 degC Derate Above 25 deg C Power Dissipation@ Tc=25 degC Derate Above 25 deg C Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case SYMBOL VCEO VCES VCBO VEBO IC PD PD Tj, Tstg Rth(j-c) BC177 BC178 45 25 50 30 50 30 5.0 5.0 0.2 0.6 2.28 1.0 6.67 -65 to +200 BC179 20 25 25 5.0 UNIT V V V V A W mW/deg C W mW/deg C deg C 175 deg C/W ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION Collector-Cut off Current ICES VCE=20V, IE=0 Tamb=125 deg C VCE=20V,.

BC178 : , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BC177,8,9 BC257,8,9 .BC307,8,9 TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 BC320,1,2 THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS, BC177, 8, 9 are complementary to BC107, 8, 9. BC257, 8, 9 are complementary to BC167, 8, 9. BC307, 8, 9 are complementary to BC237, 8, 9. BC320, 1, 2 are complementary to BC317, 8, 9. CASE TO-18 TO-92B TO-92F TO-92A CBS BC177,8,9 ECB BC257,8,9 CEB BC307,8,9 SSC BC320fl,2 ABSOLUTE MAXIMUM RATINGS TYPE -VCBO -VCES (v) (v) BC177 BC178 BC179 50 50 30 30 25 25 BC257 BC258 BC259 50 50 30 .

BC178 : .

BC178 : .

BC178 : BC177 BC178 BC179 MECHANICAL DATA Dimensions in mm (inches) 5 .8 4 (0 .2 3 0 ) 5 .3 1 (0 .2 0 9 ) 4 .9 5 (0 .1 9 5 ) 4 .5 2 (0 .1 7 8 ) GENERAL PURPOSE SMALL SIGNAL PNP BIPOLAR TRANSISTOR APPLICATIONS 5 .3 3 (0 .2 1 0 ) 4 .3 2 (0 .1 7 0 ) ) ) 0 0 1 7 2 1 . . 0 0 ( ( 3 2 3 3 . . 5 4 ) 0 0 5 . . 0 .4 8 (0 .0 1 9 ) 0 .4 1 (0 .0 1 6 ) d ia . n 0 i ( m 7 . 2 1 The BC 177, BC 178 & BC 179 are silicon epitaxial planar PNP transistors in TO-18 metal case. They are suitablefor use in driver audio stages, low noise input audio stages and as low power, high gain general purpose transistors. 2 .5 4 (0 .1 0 0 ) N o m . 1 2 .7 (0 .5 0 0 ) m in . FEATURES • SILICON NPN www.DataSheet..

BC178 : PNP BC177 – BC178 – BC179 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC177,BC178 and BC179 are silicon planar epitaxial PNP transistors mounted in TO-18 metal package. They are suitable for use in drive audio stages, low-noise input audio stages and as low power, high gain general purpose transistors. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC ICM PD TJ TStg Collector-Emitter Voltage (IB =0) Collector-Base Voltage (IE =0) Emitter-Base Voltage (IC =0) Collector Current Collector Peak Current Total Power Dissipation @ Tamb = 25° Junction Temperature Storage Temperature range BC177 BC178 BC179 -50 -45 -30 -25 -25 -20 -5 -100 -200 300 175 -65 to +150 Unit V V V m.

BC178 : MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @Ta = 25°C Derate above 25°C Total Device Dissipation @Tc = 25°C Tc = 100°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol VCEO VCES VCBO VEBO ic PD pd BC BC BC 177 178 179 45 25 20 50 30 25 50 30 25 5 0.2 0.6 2.28 1 6.67 Tj, Ts tg -65 to +200 Unit Vdc Vdc Vdc Vdc Amp Watt mW/°C Watt mW/°C °C Symbol Rejc Max 175 Unit °C/W BC177 BC178 BC179 CASE 22-03, STYLE 1 TO-18 (TO-206AA) TRANSISTOR PNP SILICON ELECTRICAL .

BC178A : .

BC178A : PNP BC177 – BC178 – BC179 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC177,BC178 and BC179 are silicon planar epitaxial PNP transistors mounted in TO-18 metal package. They are suitable for use in drive audio stages, low-noise input audio stages and as low power, high gain general purpose transistors. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC ICM PD TJ TStg Collector-Emitter Voltage (IB =0) Collector-Base Voltage (IE =0) Emitter-Base Voltage (IC =0) Collector Current Collector Peak Current Total Power Dissipation @ Tamb = 25° Junction Temperature Storage Temperature range BC177 BC178 BC179 -50 -45 -30 -25 -25 -20 -5 -100 -200 300 175 -65 to +150 Unit V V V m.

BC178A : Collector -Emitter Voltage Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Power Dissipation@ Ta=25 degC Derate Above 25 deg C Power Dissipation@ Tc=25 degC Derate Above 25 deg C Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case SYMBOL VCEO VCES VCBO VEBO IC PD PD Tj, Tstg Rth(j-c) BC177 BC178 45 25 50 30 50 30 5.0 5.0 0.2 0.6 2.28 1.0 6.67 -65 to +200 BC179 20 25 25 5.0 UNIT V V V V A W mW/deg C W mW/deg C deg C 175 deg C/W ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION Collector-Cut off Current ICES VCE=20V, IE=0 Tamb=125 deg C VCE=20V,.

BC178B : .

BC178B : Collector -Emitter Voltage Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Power Dissipation@ Ta=25 degC Derate Above 25 deg C Power Dissipation@ Tc=25 degC Derate Above 25 deg C Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case SYMBOL VCEO VCES VCBO VEBO IC PD PD Tj, Tstg Rth(j-c) BC177 BC178 45 25 50 30 50 30 5.0 5.0 0.2 0.6 2.28 1.0 6.67 -65 to +200 BC179 20 25 25 5.0 UNIT V V V V A W mW/deg C W mW/deg C deg C 175 deg C/W ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION Collector-Cut off Current ICES VCE=20V, IE=0 Tamb=125 deg C VCE=20V,.

BC178C : Collector -Emitter Voltage Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Power Dissipation@ Ta=25 degC Derate Above 25 deg C Power Dissipation@ Tc=25 degC Derate Above 25 deg C Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case SYMBOL VCEO VCES VCBO VEBO IC PD PD Tj, Tstg Rth(j-c) BC177 BC178 45 25 50 30 50 30 5.0 5.0 0.2 0.6 2.28 1.0 6.67 -65 to +200 BC179 20 25 25 5.0 UNIT V V V V A W mW/deg C W mW/deg C deg C 175 deg C/W ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION Collector-Cut off Current ICES VCE=20V, IE=0 Tamb=125 deg C VCE=20V,.

BC178C : .




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