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MBR30045CT


Part Number MBR30045CT
Manufacturer Naina Semiconductor
Title (MBR30045CT - MBR300100CTR) Schottky Power Diode
Description Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR30045CT...
Features



• Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR30045CT thru MBR300100CTR Silicon Schottky Diode, 300A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage D...

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MBR30045CT : MCC Features • • • •   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MBR30020CT THRU MBR300100CT 300 Amp Schottky Barrier Rectifier 20 to 100 Volts FULL PACK Metal of siliconrectifier, majonty carrier conducton Guard ring for transient protection Low power loss high efficiency High surge capacity, High current capability Maximum Ratings • • Operating Temperature: -65°C to +150°C Storage Temperature: -65°C to +150°C Maximum Recurrent Peak Reverse Voltage 20V 30V 35V 40V 45V 60V 80V 100V Maximum DC Blocking Voltage 20V 30V 35V 40V 45V 60V 80V 100V MCC Part Number MBR30020CT MBR30030CT MBR30035CT MBR30040CT MBR30045CT MBR3.

MBR30045CT : Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ .

MBR30045CT : Silicon Power Schottky Diode Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive MBR30045CT thru MBR300100CTR VRRM = 45 V - 100 V IF(AV) = 300 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR30045CT(R) MBR30060CT(R) MBR30080CT(R) MBR300100CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 45 32 45 -55 to 150 -55 to 150 60 42 60 -55 to 150 -55 to 150 80 57 80 -55 to 150 -55 to 150 100 70 100 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at T.

MBR30045CTR : Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR30045CT thru MBR300100CTR Silicon Schottky Diode, 300A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 140 oC TC = 25 oC tp = 8.3 ms Conditions MBR30045CT (R) 45 32 45 300 MBR30060CT MBR30080CT (R) (R) 60 42 60 300 80 56 80 300 MBR300100C T(R) 100 70 100 300 Units V V V A IFSM 2500 http://www.DataSheet4U.net/ 2500 2500 2500 A Electr.

MBR30045CTR : Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ .

MBR30045CTR : Silicon Power Schottky Diode Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive MBR30045CT thru MBR300100CTR VRRM = 45 V - 100 V IF(AV) = 300 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR30045CT(R) MBR30060CT(R) MBR30080CT(R) MBR300100CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 45 32 45 -55 to 150 -55 to 150 60 42 60 -55 to 150 -55 to 150 80 57 80 -55 to 150 -55 to 150 100 70 100 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at T.




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