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7N60L Datasheet PDF


Part Number 7N60L
Manufacturer UTC
Title N-CHANNEL MOSFET
Description The UTC 7N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state ...
Features * RDS(ON) 1.2Ω @VGS = 10 V * Ultra low gate charge (typical 29 nC ) * Low reverse transfer Capacitance ( CRSS = typical 16pF ) * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness „ SYMBOL Power MOSFET „ ORDERING INFORMATION Ordering Number Lead Fr...

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Datasheet 7N60L PDF File








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7N10 : The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe and DMOS technology to provide perfect quality. This device can also withstand high energy pulse in the avalanche and the commutation mode. The UTC 7N10 is generally applied in low voltage applications, such as DC motor controls, audio amplifiers and high efficiency switching DC/DC converters.  FEATURES * RDS(ON) ≤ 0.35 Ω @ VGS =10V, ID =3.5A * Fast Switching * Improved dv/dt Capability  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N10L-AA3-R 7N10G-AA3-R 7N10L-TM3-T.

7N100-C : The UTC 7N100-C provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 1.6Ω @ VGS=10V, ID=3.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL 1 TO-220F2  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N100L-TF2-T 7N100G-TF2-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F2 Pin Assignment 123 GDS Packing Tube  MARKING www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd 1 of 7 QW-R205-569.A 7N100-C Power MOSFET .

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7N120-E2 : The UTC 7N120-E2 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 2.2 Ω @ VGS=10V, ID=3.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N120L-TF1-T 7N120G-TF1-T 7N120L-T47-T 7N120G-T47-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-247 Pin Assignment 1 2 3 G D S G D S Packing Tube Tube  MARKING www.unisonic.com.tw Copyright © 2023 Unisonic Tech.

7N150-E3 : The UTC 7N150-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1  FEATURES0 * RDS(ON) ≤ 3.8 Ω @ VGS=10V, ID=3.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET TO-220F1  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N150L-TF1-T 7N150G-TF1-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 Pin Assignment 1 2 3 G D S Packing Tube  MARKING www.unisonic.com.tw Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 5 QW-R50.

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7N20 : The UTC 7N20 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. This device can also withstand high energy pulse in the avalanche and the commutation mode. The UTC 7N20 is generally applied in low voltage applications, such as DC motor controls, audio amplifiers and high efficiency switching DC/DC converters.  FEATURES * Low Gate Charge: 5.8nC (TYP.) * Low CRSS: 10 pF (TYP.) * RDS(ON) 0.69Ω @ VGS =10V, ID =3.5A * Fast Switching * Improved dv/dt Capability  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N20L-TA3-T 7N20G-TA3-T 7N20L-TF1.

7N20 : ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 200 ±20 7 V V A ID(puls) Pulse Drain Current 28 A Ptot Total Dissipation@TC=25℃ 70 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 1.67 ℃/W 80 ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi i.

7N20Z : Power MOSFET The UT C 7N20Z is an N-Chan nel en hancement mode po wer MOSFET providing c ustomers with e xcellent s witching p erformance and mi nimum on-state res istance. T his de vice can also withstand high energy pulse in the avalanche and the commutation mode. The UTC 7N20Z is gen erally applied in low voltage applications, such as DC motor controls , audio amplifi ers and high efficiency switching DC/DC converters. „ FEATURES * Low Gate Charge: 5.8nC (TYP.) * Low CRSS: 10 pF (TYP.) * RDS(ON) = 0.58Ω @VGS = 10 V * Fast Switching * Improved dv/dt Capability „ SYMBOL „ ORDERING INFORMATION Package TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tape Reel Tube Ordering Nu.

7N270K : SCOPE This specification is applicable with a priority over the other relevant specifications . PART NUMBER CODE Joyin ZnO Varstor JVR Element Size 05= 5mm 07= 7mm 10= 10mm 14= 14mm 20= 20mm Series N:Standard S:High Surge U:Ultra Surge Varistor Voltage The first two digits indicate voltage The thrd digit signfes the number of zeroes for example 080=8v 180=18v 181=180v 182=1800v Varistor VoltageTolerance K=±10% L=±15% M=±20% P=±25% X=for non-codable Lead Diameter 6 = 0.6±0.05 mm 8 = 0.8±0.05 mm 1 = 1.0±0.05 mm -L Lead Free Lead Length&Packaging 50=5±1.0mm for Straight lead 5±0.5mm for Kink lead U4=24mm min. for Bulk and Kink lead U5=25mm min. for Bulk and Straight lead AW=.

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7N361K : JOYIN CO., LTD. Electrical Characteristics Type No. 7N361K Maximum Allowable Voltage ACrms DC (V) (V) 230 300 Varistor Voltage Maximum Withstanding Rated Energy V /1mA Clamping Surge Wattage 10/1000us Certification Voltage Current V@10A 1 Time 2 Times (V) Tolerance (V) (A) (A) (W) (J) 360 ±10% 595 1200 600 0.25 26.0 ☆ ★ ★ ※The clamping voltage from 080P to 680K are tested at current 2.5A. Material of coating : Epoxy powder Color of coating : Yellowish brown Storage condition→ Temperature: -40℃~125℃/ Humidity : 75%RH max. Status Operation temperature range(18V~150V) : -40 to 85 ℃ Operation temperature range(180V~1800V) : -40 to 125 ℃ Lead style : DT █ P : Straight .

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7N40 : The UTC 7N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 7N40 is universally applied in electronic lamp ballast based on half bridge topology and high efficient switched mode power supply. 1 TO-220 1 TO-220F1 „ FEATURES * High switching speed * RDS(ON)=0.9Ω @ VGS=10V * 100% avalanche tested „ SYMBOL 2.Drain 1.Gate 3.Source „ ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 7N40L-TA3-T 7N40G-TA.

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