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2N1722

Microsemi

NPN SILICON HIGH POWER TRANSISTOR

TECHNICAL DATA NPN SILICON HIGH POWER TRANSISTOR Qualified per MIL-PRF-19500/262 Devices 2N1722 2N1724 Qualified Level J...


Microsemi

2N1722

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TECHNICAL DATA NPN SILICON HIGH POWER TRANSISTOR Qualified per MIL-PRF-19500/262 Devices 2N1722 2N1724 Qualified Level JAN JANTX MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC PT Value 80 175 10 5.0 3.0 50 175 -65 to +200 Units Vdc Vdc Vdc Adc W W 0 @ TA = +250C(1) @ TC = +1000C (2) TOP, Temperature Range: Operating Storage Junction Tstg 1) Derate linearly 20 mW/0C for TA between +250C and +1750C 2) Derate linearly 666 mW/0C for TC between +1000C and +1750C TO-61* 2N1724 C TO-53* 2N1722 *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS Characteristics Symbol V(BR)CEO V(BR)EBO ICES ICBO IEBO Min. 80 10 300 5.0 400 Max. Unit Vdc Vdc µAdc mAdc µAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc Emitter-Base Breakdown Voltage IE = 10 mAdc Collector-Emitter Cutoff Current VCE = 60 Vdc Collector-Base Cutoff Current VCB = 175 Vdc Emitter-Base Cutoff Current VEB = 7.0 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 Free Datasheet http://www.datasheet4u.com/ 2N1722, 2N1724 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS Forward-Current Transfer Ratio IC = 2.0 Adc, VCE = 15 Vdc IC = 5.0 Adc, VCE = 15 Vdc IC = 100 mAdc, VCE = 15 Vdc Collector-Emitter Saturation Voltage IC = 2.0 Adc, IB = 200 mAdc Base-Emitte...




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