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2SA1832


Part Number 2SA1832
Manufacturer Kexin
Title Silicon PNP Transistor
Description SMD Type Silicon PNP Epitaxial Type Transistor 2SA1832 Transistors IC SOT-523 +0.1 1.6-0.1 Unit: mm Features High Voltage and High Curren :VCE...
Features High Voltage and High Curren :VCEO=-50V,IC=-150mA(Max.) Excellent hFE Linearity : hFE (IC=-0.1mA/ hFE(IC=-2mA)=0.95(Typ.) High hFE: hFE=70 to 400 2 1.0 +0.05 0.2-0.05 +0.1 -0.1 +0.01 0.1-0.01 1 +0.15 1.6-0.15 0.55 +0.25 0.3-0.05 +0.1 0.5-0.1 0.35 3 1. Base +0.05 0.75-0.05 +0.1 0.8-0.1 2. E...

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2SA1830 : Ordering number:EN4409 2SA1830 : PNPEpitaxial Planar Silicon Transistor 2SC4734 ; NPN Triple Diffused Planar Silicon Transistor 2SA1830/2SC4734 High-Voltage Driver Applications Features · Large current capacity (IC=2A). · High breakdown voltage (VCEO≥400V). · Possible to offer the 2SA1830/2SC4734 devices in a tape reel packaging, which facilitates automatic insertion. Package Dimensions unit:mm 2084A [2SA1830/2SC4734] ( ) : 2SA1830 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol .

2SA1831 : Ordering number:EN3686A PNPTriple Diffused Planar Silicon Transistors 2SA1831 High-Voltage Amplifier, High-Voltage Switching Applications Features · High breakdown voltage (VCEO min=–800V). · Small Cob (Cob typ=1.6pF). · High reliabirity (Adoption of HVP processes). Package Dimensions unit:mm 2010B [2SA1831] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Collector Cutoff Current Emitt.

2SA1832 : Bipolar Transistors Silicon PNP Epitaxial Type 2SA1832 1. Applications • Low-Frequency Amplifiers 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage: VCEO = -50 V (3) High collector current: IC = -150 mA (max) (4) High hFE: hFE = 70 to 400 (5) Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) (6) Complementary to 2SC4738 (7) Small package 3. Packaging 2SA1832 SSM 1: Base 2: Emitter 3: Collector ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1990-10 2021-07-06 Rev.2.0 4. Orderable part number 2SA1832 Orderable part number AEC-Q101 Note 2SA1832-O 2SA1832-O,LF � General.

2SA1832 : JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors 2SA1832 TRANSISTOR (PNP) SOT-523 FEATURES z High voltage and high current z Excellent hFE linearity z Complementary to 2SC4738 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PD RθJA TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Thermal Resistance Junction to Ambient Junction and Storage Temperature Value -50 -50 -5 -150 100 125 -55 to +125 Unit V V V mA mW ℃/W ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) 1. BASE 2. EMITTER 3. COLLECTOR Parameter Coll.

2SA1832 : Plastic-Encapsulate Transistors FEATURES  High voltage and high current.  Excellent hFE linearity.  High hFE.  Complementary to 2sc4738.  Small package. Pb Lead-free Production specification 2SA1832 ORDERING INFORMATION Type No. Marking 2SA1832 SO/SY/SG SOT-523 Package Code SOT-523 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Limits VCBO collector-base voltage -50 VCEO collector-emitter voltage -50 VEBO IC emitter-base voltage collector current -5 -150 IB Base current -30 PC Collector power dissipation Tstg storage temperature range 100 -55 to +125 Tj junction temperature 125 Unit V V V mA mA mW °C °C H026 Rev.A www.gmesemi.com 1 Pr.

2SA1832 : 2SA1832 Elektronische Bauelemente -0.15A , -50V PNP Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  High Voltage and High Current  Excellent hFE Linearity  Complementary to 2SC4738 A M 3 SOT-523 3 CLASSIFICATION OF hFE Product-Rank Range Marking 2SA1832-Y 120~240 SY 2SA1832-GR 200~400 SG F K Top View 1 2 C B 1 2 L E D G H J PACKAGE INFORMATION Package SOT-523 MPQ 3K LeaderSize 7’ inch REF. A B C D E F Millimeter Min. Max. 1.5 1.7 1.45 1.75 0.75 0.85 0.7 0.9 0.9 1.1 0.15 0.25 REF. G H J K L M Millimeter Min. Max. 0.1 0.55 REF. 0.1 0.2 0.5 TYP. 0.25 0.325 Collector   Base  Emitter ABSOLUTE MAXI.

2SA1832 : 2SA1832 PNP TRANSISTOR P b Lead(Pb)-Free FEATURES: * High voltage and high current * Excellent hFE linearity * Complementary to 2SC4738 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol VCBO VCEO VEBO IC PD RθJA TJ Tstg Value -50 -50 -5 -150 100 125 -55 to +125 -55 to +125 Units V V V mA mW ℃/W ℃ ℃ 3 1 2 SOT-523(SC-75) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Total Device Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base.

2SA1832 : RoHS 2SA1832 2SA1832 FEATURES Power dissipation PCM SOT-523 TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR : 0.1 W (Tamb=25℃) Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO unless otherwise specified) Collector-emitter saturation voltage Transition frequency Collector output capacitance W CLASSIFICATION OF hFE(1) Rank Y 120-240 SY GR 2.

2SA1832 : Production specification Plastic-Encapsulate Transistors FEATURES z z z z z High voltage and high current Excellent hFE linearity High hFE Complementary to 2sc4738 Small package 2SA1832 Pb Lead-free SOT-523 ORDERING INFORMATION Type No. 2SA1832 Marking SO/SY/SG Package Code SOT-523 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC IB PC Tstg Tj Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current Base current Collector power dissipation storage temperature range junction temperature Limits -50 -50 -5 -150 -30 100 -55 to +125 125 Unit V V V mA mA mW °C °C SHENZHEN TOPSKY TECHNOLOGY CO.,LTD Rev.A www.szct.com.cn 1 .

2SA1832-GR : MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1832-Y 2SA1832-GR Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • Small Package • Mounting:any position • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix "-HF" Maximum Ratings @ Ta = 25ć(unless otherwise noted) Symbol Parameter Value IC Collector Current -0.15 PD Total Device Dissipation 100 TJ Junction Temperature 150 TSTG Storage Temperature Range -55 to +150 Unit A mW к к Electrica.

2SA1832-Y : MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1832-Y 2SA1832-GR Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • Small Package • Mounting:any position • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix "-HF" Maximum Ratings @ Ta = 25ć(unless otherwise noted) Symbol Parameter Value IC Collector Current -0.15 PD Total Device Dissipation 100 TJ Junction Temperature 150 TSTG Storage Temperature Range -55 to +150 Unit A mW к к Electrica.

2SA1834 : Transistors 2SA1834 2SC5001 (96-106-B217) (96-193-D217) 292 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit c.

2SA1836 : The 2SA1836 is PNP silicon epitaxial transistor. PACKAGE DRAWING (Unit: mm) 0.3 ± 0.05 0.1 +0.1 –0.05 FEATURES 1.6 ± 0.1 0.8 ± 0.1 • High DC current gain: hFE2 = 200 TYP. • High voltage: VCEO = −50 V 3 0 to 0.1 2 0.2 +0.1 –0 0.5 0.5 1.0 1.6 ± 0.1 0.6 0.75 ± 0.05 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) Note1 Note2 VCBO VCEO VEBO IC(DC) IC(pulse) PT Tj Tstg −60 −50 −5.0 −100 −200 200 150 –55 to + 150 V V V mA mA mW °C °C Total Power Dissipation (TA = 25°C) Junction Temperature Storage Temperature Range 1: Emitter 2: Base 3: Collector Notes 1. PW ≤ 10 ms, Dut.

2SA1837 : TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1837 Power Amplifier Applications Driver Stage Amplifier Applications 2SA1837 Unit: mm • High transition frequency: fT = 70 MHz (typ.) • Complementary to 2SC4793 Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −230 −230 −5 −1 −0.1 2.0 20 150 −55 to 150 Electrical Characteristics (Tc = 25°C) Unit V V V A A W °C °C JEDEC ― JEITA ― TOSHIBA 2-10R1A Weight: 1.7 g (typ.) Characteristics Coll.

2SA1837 : , at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R219-002.G .

2SA1837 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) ·High Current-Gain Bandwidth Product ·Complement to Type 2SC4793 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.1 A 2 W 20 150 ℃ Tstg Storage Temperature -.




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