MXP6006CT Preliminary Datasheet 60V N-Channel MOSFET Applications: z z Power Supply DC-DC Converters VDSS 60 V RDS(ON) (Max) 6.0 mΩ IDa 116 A Features: z z z z LeadFree Low RDS(ON) to Minimize Conductive Loss Low Gate Change for Fast Switching Application Optimized BVDSS Capability Ordering Inf.
z z z z LeadFree Low RDS(ON) to Minimize Conductive Loss Low Gate Change for Fast Switching Application Optimized BVDSS Capability Ordering Information Part Number MXP6006CT Package TO220 Brand MXP Absolute Maximum Ratings Tc=25℃ unless otherwise specified Symbol VDS IDa IDM EAS TJ and TSTG Parameter Drain-to-Source Voltage Continuous Drain Current Pulsed Drain Current @VG=10V Single Pulse Avalanche Energy (L=11.9mH) Operating Junction and Storage Temperature Range (TC=25℃) Value 60 116 463 960 -55 to 175 Units V A mJ ℃ a. Calculated continuous current based upon maximum allowable jun.
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