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2SC2904

Part Number 2SC2904
Manufacturer ASI
Title NPN SILICON RF POWER TRANSISTOR
Description The ASI 2SC2904 is a silicon epitaxial plana type transistor designed for high power amplifiers in HF band. PACKAGE STYLE .500 6L FLG C A 2x Ø N...
Features
• Internal Input Matching Network
• PG = 11.5 dB at 1000 W/30 MHz
• Omnigold™ Metalization System D FU LL R B G .725/18,42 F E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 22 A 50 V 20 V 4.0 V 200 W @ TC = 25 °C -55 °C to +175 °C -55 °C to +175 °C 0.75 °C/W D IM A B C D E F G H I J K L M...

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2SC2901 : .

2SC2901 : ST 2SC2901 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into two groups L and K, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Features ˙ High frequency current gain ˙ High speed switching ˙ Small output capacitance TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (T a = 25 OC) Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (10µs pulse) Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCES .

2SC2901 : 2SC2901 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into two groups L and K, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Features ․High frequency current gain ․High speed switching ․Small output capacitance Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (10μs pulse) Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCES VCEO VEBO IC IC Ptot Tj TS 1. Emitter 2..

2SC2901 : ST 2SC2901 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into two groups L and K, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (10 µs pulse) Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCES VCEO VEBO IC ICP Ptot Tj Tstg 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Value 40 40 15 5 200 500 600 150 - .

2SC2902 : ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·Complement to Type MJ2955 ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation. APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCER Collector-Emitter Voltage 800 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 15 A IB Base Current 7 A PC Collector Power Dissipation@TC=25℃ 150 W TJ, Tstg Operating and Storage Junction Temperature Range -65~+200 ℃ THERMAL CHARACTERISTICS SYM.

2SC2902 : ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor controls PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS MAX 800 400 9 15 30 150 200 -65~200 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHA.

2SC2904 : .

2SC2904 : 2SC2904 is a silicon NPN epitaxial planar type transistor specif ically designed f or high power amplif iers applications in HF band.Output stage of transmitter in HF band SSB mobile radio sets. D H 2 4 6 7 G D E F FEATURES • • • • Specified 12.5V, 30MHz Characteristics PO = 100W PEP GP ≥ 11.5dB. at 100 W/30 MHz Omnigold™ Metalization System M 1 A C 3 B C J 5 A N O K L P DIMENSIONS UNIT mm 1.EMITTER 2.EMITTER 3.BASE 4.Collector 5.EMITTER 6.EMITTER 7.FIN A B C D E F G H I J K L M N O P 4.3 5.3 8.3 12.4 7.0 11.3 12.9 18.8 25.6 4.5 0.16 3.5 6.8 R-1.6 R-3.2 R-1 3.7 4.7 7.5 11.6 5.8 10.7 12.5 18.2 24.4 3.5 0.07 2.9 5.4 MAXIMUM RATINGS CHARACTERISTICS Collector-Base Voltage Collect.

2SC2905 : .

2SC2908 : A A A .

2SC2908 : ·With TO-3PN package ·Low collector saturation voltage APPLICATIONS ·For use in power amplifier and switching circuits applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 Collector power dissipation Derate above 25 Junction temperature Storage temperature 0.4 150 -55~150 W/ CONDITIONS Open emitter Open base Open collector VALUE 200 100 12 5.0 10 2.5 50 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER .

2SC2909 : www.DataSheet.co.kr Ordering number:ENN778F PNP/NPN Epitaxial Planar Silicon Transistors 2SA1207/2SC2909 High-Voltage Switching AF 60W Predriver Applications Features · Adoption of FBET process. · High breakdown voltage. · Excellent linearity of hFE and small Cob. · Fast switching speed. Package Dimensions unit:mm 2003B [2SA1207/2SC2909] 5.0 4.0 4.0 0.45 0.5 0.6 2.0 0.45 0.44 14.0 1 2 3 5.0 ( ) : 2SA1207 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj .

2SC2909 : TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package. / Features ,hFE ,,。 High breakdown voltage, excellent linearity of hFE and small Cob, fast switching speed. / Applications ,60 。 High voltage switching. AF 60W pre-driver applications. / Equivalent Circuit / Pinning 1 23 PIN1:Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range R 100~200 S 140~280 T 200~400 http://www.fsbrec.com 1/6 2SC2909 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Current - Continuous Collector Powe.




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