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SIHFZ48


Part Number SIHFZ48
Manufacturer Vishay
Title Power MOSFET
Description Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resi...
Features 60 0.018







• Dynamic dV/dt Rating Repetitive Avalanche Rated Ultra Low On-Resistance Very Low Thermal Resistance 175 °C Operating Temperature Fast Switching Ease of Paralleling Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT TO-220AB DESCRIPTION Third generation Po...

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SIHFZ40 : Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universially preferred for commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRFZ40PbF SiHFZ40-E3 IRFZ40 SiHFZ40 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente Continuous Drain Current Pulsed Drain Currenta VGS at 10 V TC = 25.

SIHFZ44 : Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universially preferred for commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente Continuous Drain Current Pulsed Drain Currenta VGS at 10 V TC = 2.

SIHFZ44L : Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extermely efficient reliabel deviece for use in a wide variety of applications. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to.

SiHFZ44S : Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extermely efficient reliabel deviece for use in a wide variety of applications. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to.

SiHFZ46 : Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220 G S G D S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 IRFZ46PbF SiHFZ46-E3 IRFZ46 SiHFZ46 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Curre.

SiHFZ46-E3 : Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220 G S G D S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 IRFZ46PbF SiHFZ46-E3 IRFZ46 SiHFZ46 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Curre.

SIHFZ48 : Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. G S G D S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 IRFZ48PbF SiHFZ48-E3 IRFZ48 SiHFZ48 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente Pulse.

SIHFZ48L : Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipa.

SIHFZ48S : Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipa.




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