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PDTC114EE Datasheet PDF


Part Number PDTC114EE
Manufacturer NXP
Title NPN resistor-equipped transistors
Description The ADD5201 is a white LED driver for backlight applications based on high efficiency, current mode, step-up converter technology. It is designed ...
Features High Efficiency, Eight-String, White LED Driver for LCD Backlight Applications ADD5201 BLOCK DIAGRAM STEP-UP SWITCHING REGULATOR White LED driver based on inductive boost converter Integrated 50 V MOSFET with 2.9 A peak current limit Input voltage range: 6 V to 21 V Maximum output adjustable up to...

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Datasheet PDTC114EE PDF File








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PDTC113ET : NPN resistor-equipped transistors. PNP complement: PDTA113ET. 1.2 Features s Built-in bias resistors s Simplifies circuit design s Reduces component count s Reduces pick and place costs. 1.3 Applications s General purpose switching and amplification s Inverter and interface circuits s Circuit driver. 1.4 Quick reference data Table 1: Symbol VCEO IO R1 R2 Quick reference data Parameter collector-emitter voltage output current (DC) bias resistor bias resistor Conditions Min Typ 1 1 Max 50 100 Unit V mA kΩ kΩ 2. Pinning information Table 2: Pin 1 2 3 Discrete pinning Description base emitter collector 3 R1 Simplified outline Symbol 3 1 R2 1 Top view 2 sym007 2 www.DataSheet4U.com Philip.

PDTC114E : NPN Resistor-Equipped Transistor (RET) family in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package Nexperia PDTC114EE SOT416 PDTC114EM SOT883 PDTC114ET SOT23 PDTC114EU SOT323 JEITA SC-75 SC-101 SC-70 JEDEC PNP complement - PDTA114EE - PDTA114EM TO-236AB PDTA114ET - PDTA114EU Package configuration ultra small leadless ultra small small very small 1.2 Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified 1.3 Applications  Digital application in automotive and industrial segments  Control .

PDTC114E : LX1527 is designed by CMOS technology,can storage ISN and study code beforehand, it is decoded by software;ISN has 20bit can storage 1048576 for combination,this can reduce any code collision. Main Features 1 .low power consumption quiescent current<1uA ; 2 .operating voltage Vcc=2.4 - 13.0V; 3 . input four key-press through combination,that can assemble 15 key-press mostly; 4 .single oscillator circuit,need one external resistor only. 5 .small volumne8 package by SSOP ,it is upgrade product of LX2260; 6 .it is compatible with EV1527、RT1527 absolutely ; Pin Configuration 1 2 3 4 OSC1 Vcc Vss TXD K3 K2 K1 K0 8 7 6 5 LX527/1527 Pin Description Sign OSCI VCC CND TXD K0 Kl K2 Description.

PDTC114E : NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). PRODUCT OVERVIEW TYPE NUMBER PDTC114EE PDTC114EEF PDTC114EK PDTC114EM PDTC114ES PDTC114ET PDTC114EU PACKAGE PHILIPS EIAJ SOT416 SOT490 SOT346 SOT883 SOT54 (TO-92) SOT23 SOT323 SC-75 SC-89 SC-59 SC-101 SC-43 − SC-70 Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. MARKING CODE PNP COMPLEMENT 09 09 04 DS TC114E *16(1) *09(1) PDTA114EE PDTA114EEF PDTA114EK PDTA114EM PDTA114ES PDTA114ET PDTA114EU 2004 Aug 05 2 Philips Semiconductors NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ SIMPLIFIED OUTLINE, SYMBOL AND PINNING TYPE NUMBER PDTC114ES .

PDTC114EE : NPN Resistor-Equipped Transistor (RET) family in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package Nexperia PDTC114EE SOT416 PDTC114EM SOT883 PDTC114ET SOT23 PDTC114EU SOT323 JEITA SC-75 SC-101 SC-70 JEDEC PNP complement - PDTA114EE - PDTA114EM TO-236AB PDTA114ET - PDTA114EU Package configuration ultra small leadless ultra small small very small 1.2 Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified 1.3 Applications  Digital application in automotive and industrial segments  Control .

PDTC114EE : NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). PRODUCT OVERVIEW TYPE NUMBER PDTC114EE PDTC114EEF PDTC114EK PDTC114EM PDTC114ES PDTC114ET PDTC114EU PACKAGE PHILIPS EIAJ SOT416 SOT490 SOT346 SOT883 SOT54 (TO-92) SOT23 SOT323 SC-75 SC-89 SC-59 SC-101 SC-43 − SC-70 Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. MARKING CODE PNP COMPLEMENT 09 09 04 DS TC114E *16(1) *09(1) PDTA114EE PDTA114EEF PDTA114EK PDTA114EM PDTA114ES PDTA114ET PDTA114EU 2004 Aug 05 2 Philips Semiconductors NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ SIMPLIFIED OUTLINE, SYMBOL AND PINNING TYPE NUMBER PDTC114ES .

PDTC114EEF : NPN resistor-equipped transistor encapsulated in an ultra small plastic SMD SC-89 (SOT490) package. PNP complement: PDTA114EEF. PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground collector/output 1 2 MGA893 - 1 PDTC114EEF handbook, halfpage 3 R1 1 R2 3 1 Top view 2 MAM412 2 Fig.1 Simplified outline (SC-89; SOT490) and symbol. MARKING TYPE NUMBER PDTC114EEF MARKING CODE 09 3 Fig.2 Equivalent inverter symbol. QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot hFE R1 R2 -----R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor resistor ratio Tamb ≤ 25 °C IC = 5 mA; VCE = 5 V CONDITIONS open base − − .

PDTC114EK : NPN resistor-equipped transistor in an SC-59 plastic package. PNP complement: PDTA114EK. 1 3 2 MGA893 - 1 PDTC114EK 3 3 R1 1 R2 2 1 Top view 2 MAM284 Fig.1 Simplified outline (SC-59) and symbol. MARKING TYPE NUMBER PDTC114EK MARKING CODE 04 PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground collector/output Fig.2 Equivalent inverter symbol. QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot hFE R1 R2 ------R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor resistor ratio Tamb ≤ 25 °C IC = 5 mA; VCE = 5 V CONDITIONS open base − − − − 30 7 0.8 MIN. − − − − − 10 1 TYP. MAX. 50 100 100 250 − 13 1.2 kΩ UNI.

PDTC114EK : NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). PRODUCT OVERVIEW TYPE NUMBER PDTC114EE PDTC114EEF PDTC114EK PDTC114EM PDTC114ES PDTC114ET PDTC114EU PACKAGE PHILIPS EIAJ SOT416 SOT490 SOT346 SOT883 SOT54 (TO-92) SOT23 SOT323 SC-75 SC-89 SC-59 SC-101 SC-43 − SC-70 Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. MARKING CODE PNP COMPLEMENT 09 09 04 DS TC114E *16(1) *09(1) PDTA114EE PDTA114EEF PDTA114EK PDTA114EM PDTA114ES PDTA114ET PDTA114EU 2004 Aug 05 2 Philips Semiconductors NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ SIMPLIFIED OUTLINE, SYMBOL AND PINNING TYPE NUMBER PDTC114ES .

PDTC114EM : NPN Resistor-Equipped Transistor (RET) family in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package Nexperia PDTC114EE SOT416 PDTC114EM SOT883 PDTC114ET SOT23 PDTC114EU SOT323 JEITA SC-75 SC-101 SC-70 JEDEC PNP complement - PDTA114EE - PDTA114EM TO-236AB PDTA114ET - PDTA114EU Package configuration ultra small leadless ultra small small very small 1.2 Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified 1.3 Applications  Digital application in automotive and industrial segments  Control .

PDTC114EM : The AD5200 and AD5201 are programmable resistor devices, with 256 positions and 33 positions respectively, that can be digitally controlled through a 3-wire SPI serial interface. The terms programmable resistor, variable resistor (VR), and RDAC are commonly used interchangeably to refer to digital potentiometers. These devices perform the same electronic adjustment function as a potentiometer or variable resistor. Both AD5200/AD5201 contain a single variable resistor in the compact MSOP package. Each device contains a fixed wiper resistance at the wiper contact that taps the programmable resistance at a point determined by a digital code. The code is loaded in the serial input register. The.

PDTC114EM : NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). PRODUCT OVERVIEW TYPE NUMBER PDTC114EE PDTC114EEF PDTC114EK PDTC114EM PDTC114ES PDTC114ET PDTC114EU PACKAGE PHILIPS EIAJ SOT416 SOT490 SOT346 SOT883 SOT54 (TO-92) SOT23 SOT323 SC-75 SC-89 SC-59 SC-101 SC-43 − SC-70 Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. MARKING CODE PNP COMPLEMENT 09 09 04 DS TC114E *16(1) *09(1) PDTA114EE PDTA114EEF PDTA114EK PDTA114EM PDTA114ES PDTA114ET PDTA114EU 2004 Aug 05 2 Philips Semiconductors NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ SIMPLIFIED OUTLINE, SYMBOL AND PINNING TYPE NUMBER PDTC114ES .

PDTC114EMB : NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA114EMB. 1.2 Features and benefits  100 mA output current capability  Reduces component count  Built-in bias resistors  Reduces pick and place costs  Simplifies circuit design  AEC-Q101 qualified  Leadless ultra small SMD plastic package  Low package height of 0.37 mm 1.3 Applications  Low-current peripheral driver  Control of IC inputs  Replaces general-purpose transistors in digital applications  Mobile applications 1.4 Quick reference data Table 1. Symbol VCEO IO R1 R2/R1 Quick reference data Parameter collector-emitter v.

PDTC114EQA : 100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Table 1. Product overview Type number R1 PDTA143EQA 4.7 k PDTA114EQA 10 k PDTA124EQA 22 k PDTA144EQA 47 k R2 4.7 k 10 k 22 k 47 k Nexperia DFN1010D-3 (SOT1215) NPN complement PDTC143EQA PDTC114EQA PDTC124EQA PDTC144EQA 1.2 Features and benefits  100 mA output current capability  built-in bias resistors  simplifies circuit design  reduces component count  reduced pick and place costs  low package height of 0.37 mm  AEC-Q101 qualified  suitable for Automatic Optical Inspection (AOI.

PDTC114EQA : 100 mA NPN Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Table 1. Product overview Type number R1 PDTC143EQA 4.7 k PDTC114EQA 10 k PDTC124EQA 22 k PDTC144EQA 47 k R2 4.7 k 10 k 22 k 47 k Package NXP PNP complement DFN1010D-3 PDTA143EQA (SOT1215) PDTA114EQA PDTA124EQA PDTA144EQA 1.2 Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduced pick and place costs  Low package height of 0.37 mm  AEC-Q101 qualified  Suitable for Automatic Optical Inspection (A.

PDTC114ES : NPN resistor-equipped transistor in a TO-92; SOT54 plastic package. PNP complement: PDTA114ES. 1 2 3 MGL136 MAM364 PDTC114ES handbook, halfpage 2 R1 1 R2 3 1 2 3 Fig.1 Simplified outline (TO-92; SOT54) and symbol. PINNING PIN 1 2 3 DESCRIPTION base/input collector/output emitter/ground Fig.2 Equivalent inverter symbol. QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot hFE R1 R2 -----R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor resistor ratio Tamb ≤ 25 °C IC = 5 mA; VCE = 5 V CONDITIONS open base − − − − 30 7 0.8 MIN. − − − − − 10 1 TYP. MAX. 50 100 100 500 − 13 1.2 kΩ UNIT V mA mA mW 1998 Nov 26 .




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