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2N7002W


Part Number 2N7002W
Manufacturer UTC
Title N-CHANNEL POWER MOSFET
Description The UTC 2N7002W uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suita...
Features * High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability „ SYMBOL „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N7002WL-AL3-R 2N7002WG-AL3-R Package SOT-323 1 S Pin Assignment 2 3 G D Packing...

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2N7002 : and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • Motor Control • Power Management Functions Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Notes 3) • For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please ref.

2N7002 : These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications. D 1 TO-92 1. Source 2. Gate 3. Drain S G SOT-23 (TO-236AB) 2N7002/NDS7002A G D S Ordering Information Part Number 2N7000 2N7000_D74Z 2N700.

2N7002 : Production specification N-Channel Enhancement Mode Field Effect Transistor 2N7002 FEATURES  High Density Cell Design For Low Pb RDS(ON). Lead-free  Voltage Controlled Small Signal Switch.  Rugged and Reliable.  High Saturation Current Capability.  MSL 1 APPLICATIONS  N-channel enhancement mode effect transistor.  Switching application. SOT-23 ORDERING INFORMATION Type No. Marking 2N7002 7002 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS VDGR VGSS ID PD RθJA Drain-Source voltage 60 Drain-Gate voltage(RGS≤1MΩ) 60 Gate -Source voltage - continuous ±20 -Non Repetitive (tp50μs) ±40 Maximum Drain current -.

2N7002 : N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology. 1.2 Features and benefits  Suitable for logic level gate drive sources  Very fast switching  Surface-mounted package  Trench MOSFET technology 1.3 Applications  Logic level translators  High-speed line drivers 1.4 Quick reference data Table 1. Symbol VDS ID Quick reference data Parameter drain-source voltage drain current Ptot total power dissipation Static characteristics RDSon drain-source on-state resistance Conditions 25 °C ≤ Tj ≤ 150 °C VGS = 10 V; Tsp = 25 °C; see Figure 1; see Figure 3 Tsp = 25 °C; see Figure 2 VGS = 10 V; ID = 500 mA; Tj = 25 °C; see Figure .

2N7002 : Features • Advanced Trench Process Technology • Low Threshold Voltage • Fast Switching Speed • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free. “Green” Device (Note 1) • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) 1 1&KDQQHO 026)(7 Maximum Ratings • Operating Junction Temperature Range: -55°C to +150°C • Storage Temperature: -55°C to +150°C • Thermal Resistance: 115°C/W Junction to Ambient(Note2) Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous TA=25°C TA=100°C 0.34 ID 0.22 A Pulsed Drain Current IDM 2 A P.

2N7002 : The 2N7002 is a low-threshold, Enhancement-mode (normally-off) transistor that uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s ve.

2N7002 : 2N7002 N-Channel Enhancement Mode Power MOSFET General Features VDS = 60V,ID = 0.3A RDS(ON) 3Ω @ VGS=5V RDS(ON) 2Ω @ VGS=10V ESD Rating HBM 2300V High power and current handing capability Lead free product is acquired Surface mount package Schematic diagram Application Direct logic-level interface: TTL/CMOS Drivers: relays, solenoids, lamps, hammers,display, memories, transistors, etc. Battery operated systems Solid-state relays Marking and pin assignment Package Marking And Ordering Information Device Marking 7002 Device 2N7002 Device Package SOT-23 Reel Size Ø180mm SOT-23 top view Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25 unless otherwise noted).

2N7002 : bsThis Power MOSFET is the second generation of OSTMicroelectronics unique “single feature size” -strip-based process. The resulting transistor )shows extremely high packing density for low ont(sresistance, rugged avalanche characteristics and cless critical alignment steps therefore a uremarkable manufacturing reproducibility. 3 2 1 SOT23-3L TO-92 Figure 1. Internal schematic diagram Obsolete Prod SOT23-3L TO-92 Table 1. Device summary Order codes 2N7000 2N7002 Marking 2N7000G ST2N Package TO-92 SOT23-3L Packaging Bulk Tape and reel November 2008 Rev 9 1/14 www.st.com 14 Contents Contents 2N7000, 2N7002 1 Electrical ratings . ..

2N7002 : The CENTRAL SEMICONDUCTOR 2N7002 type is an N-Channel enhancement-mode MOSFET manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. MARKING CODE: 702 SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Continuous Source Current (Body Diode) Maximum Pulsed Drain Current Maximum Pulsed Source Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VDS VDG VGS ID ID IS IDM ISM PD TJ, Tstg ΘJA 60 60 40 115 75 115 800 800 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS: (TA=25°C unl.

2N7002 : N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. It is designed for use as a Surface Mounted Device (SMD) in thin and thick-film circuits, with applications in relay, high-speed and line transformer drivers. PINNING - SOT23 PIN DESCRIPTION 1 gate 2 source 3 drain QUICK REFERENCE DATA SYMBOL PARAMETER VDS ID RDS(on) drain-source voltage drain current drain-source on-resistance VGS(th) gate-source threshold voltage CONDITIONS DC value ID = 500 mA VGS = 10 V ID = 1 mA VGS = VDS MAX. UNIT 60 V 180 mA 5Ω 3V PIN CONFIGURATION ook, halfpage 3 handbook, 2 columns d 1 Top view 2 MSB003 g MBB076 - 1 s Marking code: 702 Fig.1 Simplified outline and symbol. Ap.

2N7002 : The UTC 2N7002 uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N7002L-AE2-R 2N7002G-AE2-R Note: Pin Assignment: G: Gate S: Source D: Drain Package SOT-23-3 Pin Assignment 1 2 3 G S D Packing Tape Reel  MARKING 3P L: Lead Free G: Halogen Free www.unisonic.com.tw Copyright © 2022 Unisonic Technologies Co.

2N7002 : These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products are particularly suited for low−voltage, low−current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features • High Density Cell Design for Low RDS(on) • Voltage Controlled Small Signal Switch • Rugged and Reliable • High Saturation Current Capability • ESD Protection Level: HBM 100 V, CDM 2 kV • This Device is Pb−Free and Halogen Free DATA SHEET w.

2N7002 : 2N7002 N−Ch, Enhancement Mode Field Effect Transistor SOT−23 Type Package D Features: D High Density Cell Design for Low RDS(ON) D Voltage Controlled Small Signal Switch D Rugged and Reliable D High Saturation Current Capability G S Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Drain−Source Voltage, VDSS 60V Drain−Gate Voltage (RGS  1M), VDGR . 60V Gate−Source Voltage, Continuous . . . .V.G. S. . . . . . . . . . . . . . . . . . . . . . . ..

2N7002 : SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed (Note 1) Drain Power Dissipation (Note 2) Junction Temperature VDSS VGSS ID IDP PD Tj 60 20 300 1200 300 150 Storage Temperature Range Tstg -55 150 Note 1) Pulse Width 10 , Duty Cycle 1% Note 2) Package mounted on a glass epoxy PCB(100mm2 1mm) UNIT V V mA mW A G H D 2N7002 N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR E L BL 23 1 PP M 1.

2N7002 : OptiMOS™ Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level • Avalanche rated • fast switching • Pb-free lead-plating; RoHS compliant • Halogen-free according to IEC61249-2-21 2N7002 Product Summary VDS RDS(on),max ID VGS=10 V VGS=4.5 V 60 V 3Ω 4 0.3 A PG-SOT23 3 1 2 Type 2N7002 Package Tape and Reel Information PG-SOT-23 H6327: 3000 pcs/reel Marking 72s HalogenFree Packing Yes Non Dry Parameter Symbol Conditions Continuous drain current I D T A=25 °C T A=70 °C Pulsed drain current I D,pulse T A=25 °C Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage E AS dv /dt V GS I D=0.3 A, R GS=25 Ω I D=0.3 A, V DS=48 V, di /dt =200 A/.

2N7002-01 : 2N7002-01 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage G E D G H K J L M SOT-23 A D TOP VIEW B S C Dim A B C D E G H J K L M Min 0.37 1.19 2.10 0.89 0.45 1.78 2.65 0.013 0.89 0.45 0.076 Max 0.51 1.40 2.50 1.05 0.61 2.05 3.05 0.15 1.10 0.61 0.178 Mechanical Data · · · · · Case: SOT-23, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K7A Weight: 0.008 grams (approx.) All Dimensions in mm Maximum Ratings Drain-Source Voltage @ TA = 25°C unless otherwise specified Symbol VDSS VDGR Con.

2N7002-G : The Supertex 2N7002 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast sw.




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