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B1184

Part Number B1184
Manufacturer Rohm
Title 2SB1184
Description W M.T O .C W 00Y 1 M.T . O W C W WW .100Y. M.T O W WW .100Y.C M.TW .TW M / 2SB1243 WW 00Y.CO 2SB1184 W .CO .TW Y W T . 0 Transistors .10 M .1 OM W...
Features O zExternal dimensions W WW .100Y.C M.TW WW 00Y.CO 1) Low W WW .100Y.C M.TW T V CE(sat). . O W OM WW 002SB1243 W.1 .CO 2SB1184 Y.C VCE(sat) = -0.5V (Typ.)WW W Y W .TW W 0 T ± . 1 + 0.2 0 WW .100Y.C M T ± M . .B = -2A / -0.2A) 2.3 −0.1 1 M . 6.5±0.2 O W O W (I C /I C C0.5 . O W W +0.2 C W . Y W 5.1 C...

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B1182 : Transistors Medium power Transistor(*32V,*2A) 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Unit: mm) (96-131-B24) 215 Free Datasheet http://www.datasheet4u.com/ Transistors FAbsolute maximum ratings (Ta = 25_C) 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FElectrical characteristics (Ta = 25_C) 216 Free Datasheet http://www.datasheet4u.com/ Transistors FPackaging specifications and hFE 2SB1188 / 2SB1182 / 2SB1240 / 2SB822.

B1184 : SMD Type Power transistor 2SB1184 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low VCE(sat). PNP silicon transistor. 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation(Tc=25 ) Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -60 -50 -5 -3 1 150 -55 to +150 Unit V V V A W Electrical Characteristics Ta =.

B1185 : Transistors www.DataSheet4U.com Power Transistor (*60V, *3A) 2SB1184 / 2SB1243 / 2SB1185 FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Units: mm) (96-128-B57) 223 Transistors www.DataSheet4U.com 2SB1184 / 2SB1243 / 2SB1185 FAbsolute maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE hFE values are classified as follows : 224 Transistors www.DataSheet4U.com 2SB1184 / 2SB1243 / 2SB1185 FElectrical characteristic curves 225 Transistors www.DataSheet4U.com 2SB1184 / 2SB1243 / 2.

B1186 : ·With TO-220Fa package ·Low collector saturation votlage ·Complement to type 2SD1763 ·High breakdown voltage APPLICATIONS ·For use in low frequency power amplifer applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 20 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -5 -1.5 -3.0 2.0 W UNIT V V V A A Free Datasheet http://www.Datasheet4U.com SavantIC Semiconductor www.DataSheet.

B1187 : www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .




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