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2SC2216


Part Number 2SC2216
Manufacturer Cnelectr
Title NPN Transistor
Description Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 2SC2216 Features • • • • Capable of 300mWatts of Power ...
Features



• Capable of 300mWatts of Power Dissipation. Collector-current 50mA Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC NPN Silicon Plastic-Encapsulate Transistor TO-92 Pin Configuration Bottom View E B C A E Electrical Characteristics @ 25OC U...

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2SC2215 : SILICON NPN PLANAR TYPE TV 1ST, 2ND PICTURE IF AMPLIFIER APPLICATIONS. FEATURES • High Gain : Gpe =35dB (Typ.) (f=45MHz) • Excellent Forward AGC Characteristics. 2SC2215 Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO vEBO ic IE ?C T J T stg RATING 40 UNIT V 40 V 4 V 50 mA -50 mA 250 mW 125 °C -55^125 °C 1. BASS 2. EMITTER a COLLECTOR TO 92 43 2 — 5P IE Weight : 0.21g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC Collector Cut-off Current SYMBOL L CBO TEST CONDITION.

2SC2216 : 2SC2216,2SC2717 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2216,2SC2717 TV Final Picture IF Amplifier Applications Unit: mm · High gain: Gpe = 33dB (typ.) (f = 45 MHz) · Good linearity of hFE. Maximum Ratings (Ta = 25°C) Characteristics 2SC2216 Collector-base voltage 2SC2717 Collector-emitter voltage 2SC2216 2SC2717 Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Rating 50 30 45 25 4 50 -50 300 125 -55~125 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1E Weight: 0.21 g (typ.) Char.

2SC2216 : 1. BASE 2. EMITTER 3. COLLECTOR 2SC2216(NPN) TO-92 Bipolar Transistors TO-92 Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature 50 45 4 50 300 125 -55-125 V V V mA mW ℃ ℃ Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown volt.

2SC2216 : RoHS 2SC2216 2SC2216 FEATURES Power dissipation TRANSISTOR (NPN) TO—92 PCM: 300 mW (Tamb=25℃) Collector current 50 mA ICM: Collector-base voltage 50 V V(BR)CBO : Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. BASE 2. EMITTER ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE unless otherwise specified) Test Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Bass-emitter saturation voltage Transition frequency W J E E R T C E L VCE (sat) VBE (sat) Ic= 10 mA .

2SC2216 : 2SC2216(3DG2216) :。 NPN /SILICON NPN TRANSISTOR Purpose: TV final picture IF amplifier applications. :,hFE 。 Features: High gain, good hFE linearity. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC IE PC Tj Tstg 50 45 4.0 50 -50 300 150 -55~150 V V V mA mA mW ℃ ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition Rating Max Unit Min Typ VCEO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Gpe CC.rbb′ IC=10mA VCB=50V VEB=3.0V VCE=12.5V IC=15mA IC=15mA VCE=12.5V VCB=10V VCB=10V IE=0 IB=0 IE=0 IC=0 IC=12.5mA IB=1.5mA IB=1.5mA IC=12.5mA f=30MHz 45 0.1 0.1 40 140 0.2 1.5 300 0.8 29 2.0 36 25 V μA μA V V MHz pF dB ps VCC=12.5V IE=-12.5mA f=45MHz I.

2SC2216 : 2SC2216 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free 0.05 A , 50 V NPN Plastic Encapsulated Transistor FEATURES  Amplifier dissipation NPN Silicon TO-92 G H Base Emitter Collector D J A B K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 REF. A B C D E F G H J K E C F Collector   Base  Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC.

2SC2216 : Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com .

2SC2216 : MCC Micro Commercial Components TM   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2216 Features • • • • • • • Capable of 300m Watts of Power Dissipation. Collector-current : ICM=50mA Collector-base Voltage:V(BR)CBO= 50V Operating and storage junction temperature range: -55OC to +150 OC Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Lead Free Finish/Rohs Compliant ("P"Suffix designates Compliant. See ordering information) Halogen free available upon request by adding suffix "-HF" NPN Silicon Plastic-Encapsulate Transistor TO-92 A E • Electrical Characteristics @ 25OC Unless Otherwise Specifie.

2SC2216 : TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package. / Features ,hFE 。 High gain, good hFE linearity. / Applications 。 TV final picture IF amplifier applications. / Equivalent Circuit / Pinning 1 23 PIN1:Collector PIN 2:Emitter PIN 3:Base / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 2SC2216 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Emitter Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC IE PC Tj Tstg DATA SHEET Ratin.

2SC2216M : SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package.  / Features ,hFE 。 High gain, good hFE linearity.  / Applications 。 TV final picture IF amplifier applications.  / Equivalent Circuit / Pinning 3 2 1 PIN1:Emitter PIN 2:Base PIN 3:Collector / hFE Classifications & Marking hFE Range Marking 40~140 H16 http://www.fsbrec.com 1/6 2SC2216M Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC IE PC Tj Tstg DATA SHEET Rating 50 45 4.0 .




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