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BV32


Part Number BV32
Manufacturer Bluecolour
Title NPN Silicon Epitaxial Planar Transistor
Description BV32 NPN Silicon Epitaxial Planar Transistor High voltage fast switching power transistor 1.Base 2.Emitter 3.Collector TO-92 Plastic Package We...
Features B = 0.25 A Symbol hFE hFE ICBO IEBO V(BR)CEO Min. 8 5 400 Max. 35 25 1 1 - Unit mA mA V VCEsat - 0.5 1 3 1 1.2 V VBEsat V Page 1 of 2 6/3/2011 Free Datasheet http://www.Datasheet4U.com Page 2 of 2 6/3/2011 Free Datasheet http://www.Datasheet4U.com ...

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BV32 : BV32 NPN Silicon Epitaxial Planar Transistor High voltage fast switching power transistor Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Peak Current (tp 5 ms) Base Current Base Peak Current Total Dissipation Operating Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg TO-92 Plastic Package Weight approx. 0.19g Value 700 400 9 1.5 3 0.75 1.5 1.1 150 - 65 to + 150 Unit V V V A A A A W O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 2 V, IC = 0.5 A at VCE = 2 V, IC = 1 A Collector Cutoff Current at VCB = 700 V Emitter .

BV32 : The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STBV32G and STBV32G-AP are supplied using halogen-free molding compound. TO-92 TO-92AP Figure 1. Internal schematic diagram Table 1. Device summary Order codes STBV32 STBV32G STBV32-AP STBV32G-AP Marking BV32 BV32G BV32 BV32G Package TO-92 TO-92 TO-92AP TO-92AP July 2008 Rev 8 Packaging Bulk Bulk Ammopack Ammopack 1/11 www.st.com 11 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum rating Symbol Par.

BV32G : The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STBV32G and STBV32G-AP are supplied using halogen-free molding compound. TO-92 TO-92AP Figure 1. Internal schematic diagram Table 1. Device summary Order codes STBV32 STBV32G STBV32-AP STBV32G-AP Marking BV32 BV32G BV32 BV32G Package TO-92 TO-92 TO-92AP TO-92AP July 2008 Rev 8 Packaging Bulk Bulk Ammopack Ammopack 1/11 www.st.com 11 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum rating Symbol Par.




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