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RU190N08Q

Ruichips

N-Channel Advanced Power MOSFET

RU190N08Q N-Channel Advanced Power MOSFET Features Pin Description · 80V/190A RDS (ON)=3.9mΩ(Typ.) @ VGS=10V ·Avalan...


RU190N08Q

Ruichips


Octopart Stock #: O-799195

Findchips Stock #: 799195-F

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Description
RU190N08Q N-Channel Advanced Power MOSFET Features Pin Description · 80V/190A RDS (ON)=3.9mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugged · Lead Free and Green Devices Available Applications TO-247 ·Automotive applications and a wide variety of other applications ·High Efficiency Synchronous in SMPS ·High Speed Power Switching Absol
More View ute Maximum Ratings Symbol Parameter N-Channel MOSFET Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current TC=25°C 80 ±25 175 -55 to 175 190 ① V °C °C A IS Mounted on Large Heat Sink IDP ID PD RθJC 300µs Pulsed Drain Current Tested Continue Drain Current Maximum Power Dissipation Thermal Resistance -Junction to Case TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 700 190 ② ① ① A 140 326 W 163 0.46 °C/W mJ Drain-Source Avalanche Ratings EAS ③ Avalanche Energy ,Single Pulsed 1225 Copyright Ruichips Semiconductor Co., Ltd Rev. D – NOV., 2012 www.ruichips.com http://www.Datasheet4U.com RU190N08Q Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) ④ (TA=25°C Unless Otherwise Noted) RU190N08Q Parameter Test Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS= 80V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±25V, VDS=0V VGS= 10V, IDS=40A 80 1 30 2 3 4 ±100 3.9 4.8 V µA V nA mΩ Diode Characteristics VSD trr qrr ④ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ⑤ ISD=40A, VGS=0V ISD=40A, dlSD/dt=100A/µs 68 130 1.2 V ns nC Dynamic Characteristics RG Ciss Coss Crss td(ON) tr td(OFF) tf Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ⑤ VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS= 30V, Frequency=1.0MHz 1.0 6800 1100 490 38 Ω pF VDD=35V, RL=35Ω, IDS= 1A, VGEN= 10V, RG=6Ω 22 ns 120 75 Gate Charge Characteristics Qg Qgs Qgd Notes: Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=30V, VGS= 10V, IDS=40A 155 45 48 nC ①Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 90A. ②Pulse width limited by safe operating area. ③Limited by TJmax, IAS =50A, VDD = 48V, RG = 47Ω , Starting TJ = 25°C. ④Pulse test ; Pulse width≤300µs, duty cycle≤2%. ⑤Guaranteed by design, not subject to production testing. Copyright Ruichips Semiconductor Co., Ltd Rev. D – NOV., 2012 2 www.ruichips.com RU190N08Q Typical Characteristics Power Dissipation Drain Current ID - Drain Current (A) Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe O






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