TK80E08K3 Datasheet

TK80E08K3 N-Channel MOSFET

Target Specification TK80E08K3 ) TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS TK80E08K3 E-Bike/UPS/Inverter Unit: mm Low drain−source ON resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 7.5 mΩ (typ.) : |Yfs| = 135 S (typ.) : IDSS =.

Features

.) 2 change in Note : Using continuously under heavy loads (e.g. the application of high temperat ure/current/voltage and the signif icant temperature, etc.) may cause this product to decrease in the relia bility significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design t he appropriate reliabil ity upon re viewing the Tos hiba Semiconductor Reliability Handbook (“Han dling 1 Precautions”/“Derating Concept and Met hods”) and individual r eliability data (i. e. reliability test report and estimate d .