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IPG20N06S3L-23 Datasheet PDF


Part Number IPG20N06S3L-23
Manufacturer Infineon
Title Power Transistor
Description IPG20N06S3L-23 OptiMOS®-T Power-Transistor Product Summary V DS R DS(on),max5) ID 55 23 20 V mΩ A Features • Dual N-channel Logic Level - Enhan...
Features
• Dual N-channel Logic Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested PG-TDSON-8-4 Type IPG20N06S3L-23 Package PG-TDSON-8-4 Marking 3N06L23 Maximum ratings, at T j=25 °C, unless o...

File Size 160.08KB
Datasheet IPG20N06S3L-23 PDF File








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IPG20N06S3L-35 : IPG20N06S3L-35 OptiMOS®-T Power-Transistor Product Summary V DS R DS(on),max5) ID 55 35 20 V mΩ A Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested PG-TDSON-8-4 Type IPG20N06S3L-35 Package PG-TDSON-8-4 Marking 3N06L35 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current one channel active Symbol ID Conditions T C=25 °C, V GS=10 V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) one channel active Avalanche energy, single pulse2, 5) Avalanche current, single pulse5) Gate source voltage4) Power dissipati.




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