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STS8202


Part Number STS8202
Manufacturer SamHop Microelectronics
Title Dual N-Channel MOSFET
Description Green Product STS8202 Ver 1.1 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID...
Features Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. TSOT 26 Top View D1 D2 S1 D1/D2 S2 1 2 3 6 5 4 G1 D1/D2 G2 G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-...

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STS8201 : www.DataSheet4U.com S T S 8201 S amHop Microelectronics C orp. J an. 03 2006 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( mW ) Max ID 5A R DS (ON) S uper high dense cell design for low R DS (ON ). 27 @ V G S = 4.0V 40 @ V G S = 2.5V R ugged and reliable. S urface Mount P ackage. E S D P rotected. D1 D2 S OT26 Top View S1 D1/D2 S2 1 2 3 6 5 4 G1 D1/D2 G2 G1 G2 S1 S2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ T J =25 C -P ulsed b S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 20 12 5 20 1.25 1.25 -55 to 150 Un.

STS8205 : www.DataSheet4U.com S T S 8205 S amHop Microelectronics C orp. J un,08 2005 ver 1.4 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( mW ) Max ID 4A R DS (ON) S uper high dense cell design for low R DS (ON ). 30 @ V G S = 4.0V 46 @ V G S = 2.5V R ugged and reliable. S urface Mount P ackage. D1 D2 TS OP 6 Top View S1 D1/D2 S2 1 2 3 6 5 4 G1 D1/D2 G2 G1 S1 G2 S2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ T J =25 C -P ulsed b S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 20 10 4 25 2 1.25 -55 to 150 Unit V V A A A W C .

STS8207 : Gre r Pro STS8207 Ver 1.0 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 34 20V 4.5A 36 40 49 @ VGS=4.0V @ VGS=3.7V @ VGS=3.1V @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. TSOT 26 Top View D1 D2 S1 D1/D2 S2 1 2 3 6 5 4 G1 D1/D2 G2 G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 20 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 4.5 3.6 18 a Units V V A A A W W °C Maximum.

STS8208 : www.DataSheet4U.com S T S 8208 S amHop Microelectronics C orp. J an. 03 2006 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( mW ) Max ID 5A R DS (ON) S uper high dense cell design for low R DS (ON ). 27 @ V G S = 4.0V 40 @ V G S = 2.5V R ugged and reliable. S urface Mount P ackage. E S D P rotected. D1 D2 TS OP 6 Top View S1 D1/D2 S2 1 2 3 6 5 4 G1 D1/D2 G2 G1 G2 S1 S2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ T J =25 C -P ulsed b S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 20 12 5 20 1.25 1.25 -55 to 150 U.




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