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STS3622


Part Number STS3622
Manufacturer SamHop
Title Dual N-Channel Enhancement Mode Field Effect Transistor
Description S amHop Microelectronics C orp. S T S 3622 J an, 03 2006 Dual N-Channel Enhancement Mode Field Effect Transistor P R ODUC T S UMMAR Y V DS S 30V...
Features Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS = 10V, ID = 3A V GS = 4.5V, ID = 2A V DS = 5...

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STS3620 : Green Product STS3620 Ver 2.0 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 86 @ VGS=10V 30V 2.6A 100 @ VGS=4.5V 128 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. TSOT 26 Top View D1 D2 S1 D1/D2 S2 1 2 3 6 5 4 G1 D1/D2 G2 G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 30 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 2.6 2.1 10 a Units V V A A A W W °C Maximum Power Di.

STS3621 : S T S 3621 S amHop Microelectronics C orp. Oct. 24 2006 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C hannel) V DS S 30V P R ODUC T S UMMAR Y (P -C hannel) V DS S -30V ID 3A R DS (ON) ( m Ω ) Max ID -2A R DS (ON) ( m Ω ) Max 50 @ V G S = 10V 65 @ V G S = 4.5V D1 90 @ V G S = -10V 135 @ V G S = -4.5V D2 S OT 26 Top View G1 S2 G2 1 2 3 6 5 4 D1 S1 D2 G1 S1 N-ch G2 S2 P -ch ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed b a S ymbol V DS V GS 25 C 70 C IDM IS PD Ta=70 C T J , T S TG ID N-C hannel P-C hannel 30 20 3 2.7 12 1.

STS3623 : S amHop Microelectronics C orp. S T S 3623 J un, 09 2006 Dual N-Channel Enhancement Mode Field Effect Transistor P R ODUC T S UMMAR Y V DS S 30V F E AT UR E S S uper high dense cell design for low R DS (ON ). ID 4A R DS (ON) ( m : ) Max 50 @ V G S = 10V 65 @ V G S = 4.5V R ugged and reliable. S OT-26 package. D1 D2 S OT26 Top View G1 S2 G2 1 2 3 6 5 4 D1 S1 D2 G1 S1 G2 S2 AB S OL UTE MAXIMUM R ATINGS (T A =25 C unles s otherwis e noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ T J =25 C b -P ulsed Drain-S ource Diode Forward C urrent Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM.




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