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SVF7N65F


Part Number SVF7N65F
Manufacturer Silan Microelectronics
Title 650V N-CHANNEL MOSFET
Description SVF7N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS t...
Features ∗ 7A,650V,RDS(on)(typ)=1.1 Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE Silan VDMOS Code of F-Cell process Nominal current,using 1 or 2 digits: Example:4 denotes 4A, 10 denotes 10A, 08 denotes 0.8A N denotes N Channel Package information. Exampl...

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SVF7N65CF : SVF7N65CF/D/MJ/K/S/FQ/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. 2 11 3 3 1.Gate 2.Drain 3.Source TO-263-2L 12 3 TO-251J-3L 12 3 TO-262-3L FEATURES  7A, 650V, RDS(on)(typ.)=1.1Ω@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability TO-220F-3.

SVF7N65CFJ : 0B SVF7N65CFJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES 1B  7A, 650V, RDS(on)(typ.)=1.1Ω@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF7N65CFJ Package TO-220FJ-3L Marking 7.

SVF7N65D : SVF7N65CF/D/MJ/K/S/FQ/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. 2 11 3 3 1.Gate 2.Drain 3.Source TO-263-2L 12 3 TO-251J-3L 12 3 TO-262-3L FEATURES  7A, 650V, RDS(on)(typ.)=1.1Ω@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability TO-220F-3.

SVF7N65FQ : SVF7N65CF/D/MJ/K/S/FQ/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. 2 11 3 3 1.Gate 2.Drain 3.Source TO-263-2L 12 3 TO-251J-3L 12 3 TO-262-3L FEATURES  7A, 650V, RDS(on)(typ.)=1.1Ω@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability TO-220F-3.

SVF7N65K : SVF7N65CF/D/MJ/K/S/FQ/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. 2 11 3 3 1.Gate 2.Drain 3.Source TO-263-2L 12 3 TO-251J-3L 12 3 TO-262-3L FEATURES  7A, 650V, RDS(on)(typ.)=1.1Ω@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability TO-220F-3.

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SVF7N65S : SVF7N65CF/D/MJ/K/S/FQ/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. 2 11 3 3 1.Gate 2.Drain 3.Source TO-263-2L 12 3 TO-251J-3L 12 3 TO-262-3L FEATURES  7A, 650V, RDS(on)(typ.)=1.1Ω@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability TO-220F-3.

SVF7N65T : SVF7N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 7A,650V,RDS(on)(typ)=1.1 Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE Silan VDMOS Code of F-Cell process Nominal current,using 1 o.




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